2022
DOI: 10.1016/j.ceramint.2021.12.203
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Fabrication and characterization of porous Si/CuO film for visible light MSM photodetector: The effect of post-processing temperature

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Cited by 26 publications
(7 citation statements)
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“…The I-V characteristic under dark condition of the fabricated visible light CdO/porous Si photodetector is illustrated in figure 4(a) wherein devices fabricated at different laser energy exhibited relatively well-organized rectification behavior [13]. In such a geometry, the attained dark current is mainly due to the trapping of free electrons onto the surface of the deposited CdO film (inset in figure 4(a)) [16]; this can in turn be attributed to the adsorption of oxygen molecules as a result of the surface dangling bond phenomenon (O 2 (g) + e − → O 2− ). Upon exposure to light (inset in figure 4(b)), a number of electron-hole pairs are generated onto the surface of the deposited CdO film after which a boosted electron injection number is acquired within the conduction band (CB) of the utilized semiconductor [25,26].…”
Section: Characteristics Of the Deposited Filmsmentioning
confidence: 99%
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“…The I-V characteristic under dark condition of the fabricated visible light CdO/porous Si photodetector is illustrated in figure 4(a) wherein devices fabricated at different laser energy exhibited relatively well-organized rectification behavior [13]. In such a geometry, the attained dark current is mainly due to the trapping of free electrons onto the surface of the deposited CdO film (inset in figure 4(a)) [16]; this can in turn be attributed to the adsorption of oxygen molecules as a result of the surface dangling bond phenomenon (O 2 (g) + e − → O 2− ). Upon exposure to light (inset in figure 4(b)), a number of electron-hole pairs are generated onto the surface of the deposited CdO film after which a boosted electron injection number is acquired within the conduction band (CB) of the utilized semiconductor [25,26].…”
Section: Characteristics Of the Deposited Filmsmentioning
confidence: 99%
“…Porous silicon is also used as a host for metal oxide nanomaterials due to the postoccurred excellent optical behavior, flexible structure, and relatively high surface-to-volume ratio [11,12]. Hence, the optoelectronic behavior of porous silicon could be potentially enhanced through the deposition of metal oxide semiconductors layer such as copper oxide (CuO), zinc oxide (ZnO), nickel oxide (NiO) and cadmium oxide (CdO) [13][14][15][16]. CdO is an n-type semiconductor which possesses direct and indirect optical band gaps of 2.5 eV and 1.98 eV, respectively [17].…”
Section: Introductionmentioning
confidence: 99%
“…Metal and metal oxide NPs have shown a wide-range of applications such as solar cells, sensors, thermoelectric, catalysis…etc. [3][4][5][6][7] . In the field of nanotechnology, nanomedicine in particular, metal and metal oxide have revealed promising properties as antimicrobial agents 8,9 .…”
Section: Introductionmentioning
confidence: 99%
“…In addition, thermal calcination of LDH results in the 2D layers' diminishment and the continuous formation of MMO structure, which consists of metal oxide and spinel phases [20]. The MMO formation has demonstrated a great attraction within research societies in many applications such as dye-sensitized solar cell [21], photodetector [22,23], and gas sensor [24,25], etc. The calcination temperature has great influence on the acquired MMO's properties, wherein its optical behavior was found to be potentially affected [26].…”
Section: Introductionmentioning
confidence: 99%