Fabrication and Characterization of P3HT/MoS₂ Thin-Film Based Ammonia Sensor Operated at Room Temperature

Verma, Ankit; Sahu, Praveen Kumar; Chaudhary, Vidhi; Singh, Arun Kumar; Mishra, Varun Narayan; Prakash, Rajiv

doi:10.1109/jsen.2022.3170698

Cited by 18 publications

(6 citation statements)

References 56 publications

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“…Some key symbols used in (13) are defined as follows. (i) 𝜏𝜏 is the TFT channel current delay in NQS operation (in seconds).…”

Section: F Non-quasi-static (Nqs) Effect In Zno Tfts Operating In The...mentioning

confidence: 99%

“…Given these properties, LAE has been widely used in flatpanel displays, X-ray imagers, and solar panels [1]- [3]. More recently, LAE also has been envisioned for novel sensing applications in the domains of healthcare [4], [5], environment [6], agriculture [7], and structural health [8], with sensors for light [9], strain [10], perspiration [11], pressure [12], and gases [13].…”

Section: Introductionmentioning

confidence: 99%

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Device, Circuit, and System Design for Enabling Giga-Hertz Large-Area Electronics

Fata

et al. 2022

IEEE Open J. Solid-State Circuits Soc.

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Recent progress has substantially increased the operating frequency of large-area electronic (LAE) devices. Their integration into circuits has enabled unprecedented system-level capabilities, towards future wireless applications for the Internet of Things (IoT) and 5G/6G. These exploit large dimensions and flexible form-factors. In this work, we focus on giga-Hertz (GHz) zinc-oxide (ZnO) thin-film transistors (TFTs) as a foundational device for enabling GHz LAE circuits and systems. To further understand their operation and limits in the newly possible frequency regime, we incorporate the effects of temperature and of nonquasi-static (NQS) physics into the device models. We then analyze operation including these effects on a fundamental circuit block, the cross-coupled inductor-capacitor (LC) oscillator. It is used in representative LAE systems, namely a 13.56 𝑀𝑀𝑀𝑀𝑀𝑀 radiofrequency identification (RFID) reader array for near-field energy transfer, and a 1 𝐺𝐺𝑀𝑀𝑀𝑀 phased array for far-field radiation beam steering. Co-design of devices, circuits, and systems is essential for achieving flexible and meter-scale monolithic integrated LAE wireless systems. For these, understanding temperature limitations and the NQS effect is crucial.

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“…Some key symbols used in (13) are defined as follows. (i) 𝜏𝜏 is the TFT channel current delay in NQS operation (in seconds).…”

Section: F Non-quasi-static (Nqs) Effect In Zno Tfts Operating In The...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Device, Circuit, and System Design for Enabling Giga-Hertz Large-Area Electronics

Fata

et al. 2022

IEEE Open J. Solid-State Circuits Soc.

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“…Recently, two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS 2 , MoSe 2 , WS 2 , and WSe 2 , have attracted tremendous attention as next-generation semiconductors due to their fascinating electrical and optical properties. − The electrical properties of 2D TMD-based field effect transistors can be effectively and nondestructively tuned by coating various organic molecules on their surface due to surface charge-transfer doping or formation of heterostructures. − However, many previous reports found that this may result in an increase of both ON and OFF current, severely limiting the signal-to-noise ratio (SNR) when applied to photosensing applications (i.e., phototransistors). − An example of such an increase in OFF current after coating organic molecules on a 2D TMD-based transistor is shown in Figure S1. Therefore, the effective application of organic coatings on TMD-based phototransistors dictates that it is necessary to limit potential OFF current increases and act as a light absorption layer to improve the photosensitivity (i.e., SNR) of TMD-based phototransistors.…”

Section: Introductionmentioning

confidence: 99%

High-Photosensitivity WSe₂ Phototransistor with Electrically Self-Isolated C8-BTBT as a Light Absorption Layer

Park,

Hong

2024

ACS Photonics

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Recently, two-dimensional (2D) transition metal dichalcogenides, such as tungsten diselenide (WSe 2 ), have been intensively explored for numerous optoelectronic applications owing to their outstanding electrical and optical properties. Although previous reports have attempted to implement highperformance phototransistors based on WSe 2 through various organic molecule coatings, this method remains a key challenge since the surface charge transfer after the organic molecule coating may increase both ON and OFF currents of the device, severely limiting the signal-to-noise ratio (SNR). Here, we report a highly photosensitive WSe 2 phototransistor with electrically self-isolated C8-BTBT as the light absorption layer. The self-isolated C8-BTBT on the WSe 2 channel could act solely as a light absorption layer, without any electrical contribution into WSe 2 , resulting in a significant improvement in photosensitivity (i.e., SNR). The self-isolated C8-BTBT coating was found to improve the photosensitivity of the device by 1294% under UV light illumination (λ ex = 406 nm) with an incident light power density (P inc ) of 6.66 mW cm −2 . Our study confirmed that this electrical self-isolation technique for the light absorption layer can be effectively used for high-performance 2D photosensing applications.

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“…16−18 FFTM involves the natural surface energy of the two solvents and produces a floating ultrathin film over a low surface energy solvent. For details of FFTM, one can access the reports of Pandey et al, 18 Chaudhary et al, 19 and Verma et al 20 It is known that thin and compact films can provide better protection to the substrate than thick and porous films. In view of the above requirements, FFTM has been chosen in this work based on the benefits of using FFTM mentioned in the above lines.…”

Section: Introductionmentioning

confidence: 99%

“…Instead of the abovementioned methods, the floating film transfer method (FFTM) can be used as an effective method of coating because it provides an ultrathin, high-quality, and uniform film thickness at a very low cost with low skill. − FFTM involves the natural surface energy of the two solvents and produces a floating ultrathin film over a low surface energy solvent. For details of FFTM, one can access the reports of Pandey et al, Chaudhary et al, and Verma et al It is known that thin and compact films can provide better protection to the substrate than thick and porous films. In view of the above requirements, FFTM has been chosen in this work based on the benefits of using FFTM mentioned in the above lines.…”

Section: Introductionmentioning

confidence: 99%

Thin-Film Coating of the Hydrophobic Lotus Leaf on Copper by the Floating Film Transfer Method and Investigation on the Corrosion Behavior of Coated Copper in Saline Water

Jha

Jana

Pal

et al. 2022

Ind. Eng. Chem. Res.

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Copper (Cu) is an important base material for many electrical, thermal, and home applications. However, corrosion of Cu is a serious concern in chloride-containing solutions. The present work reports lotus leaf coating on Cu as a successful preventive solution. After preparation of a lotus leaf chloroform extract (LLCE), an ultrathin (15 ± 5 nm) film of LLCE is created by the floating film transfer method (FFTM) and transported on Cu through stamping. LLCE has been characterized by UV–visible spectroscopy (UVS), nuclear magnetic resonance (NMR), and Fourier transform infrared (FTIR) spectroscopy (FTIRS) techniques, which disclose that LLCE meets the expectations of being rich in biomolecules. The LLCE coating on Cu was done in a layerwise manner (1–3) and analyzed with scanning electron microscopy (SEM) and a drop shape analyzer (DSA). The SEM images show that there are films on Cu, and DSA suggests that LLCE coatings have increased the hydrophobicity of Cu (contact angle 96) to greater than 100. Open-circuit potential (OCP) curves, Tafel polarization (TP) curves, electrochemical impedance spectroscopy (EIS), SEM, energy-dispersive X-ray (EDX) spectroscopy, and atomic force microscopy (AFM) have been deployed to investigate the LLCE-coated Cu corrosion in 0.5 M sodium chloride. The LLCE film of three layers (3L) on Cu is found to be the most efficient (97%, TP) against corrosion among the tested ones. SEM and AFM images evidently show that the 3L-coated Cu was the least damaged through corrosion. The reason for prevention can be recommended as blockage of the openings on the bare Cu surface by LLCE films.

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Fabrication and Characterization of P3HT/MoS₂ Thin-Film Based Ammonia Sensor Operated at Room Temperature

Cited by 18 publications

References 56 publications

Device, Circuit, and System Design for Enabling Giga-Hertz Large-Area Electronics

Device, Circuit, and System Design for Enabling Giga-Hertz Large-Area Electronics

High-Photosensitivity WSe₂ Phototransistor with Electrically Self-Isolated C8-BTBT as a Light Absorption Layer

Thin-Film Coating of the Hydrophobic Lotus Leaf on Copper by the Floating Film Transfer Method and Investigation on the Corrosion Behavior of Coated Copper in Saline Water

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Fabrication and Characterization of P3HT/MoS₂ Thin-Film Based Ammonia Sensor Operated at Room Temperature

Cited by 18 publications

References 56 publications

Device, Circuit, and System Design for Enabling Giga-Hertz Large-Area Electronics

Device, Circuit, and System Design for Enabling Giga-Hertz Large-Area Electronics

High-Photosensitivity WSe2 Phototransistor with Electrically Self-Isolated C8-BTBT as a Light Absorption Layer

Thin-Film Coating of the Hydrophobic Lotus Leaf on Copper by the Floating Film Transfer Method and Investigation on the Corrosion Behavior of Coated Copper in Saline Water

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Product

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High-Photosensitivity WSe₂ Phototransistor with Electrically Self-Isolated C8-BTBT as a Light Absorption Layer