Fabrication and Characterization of p-Type SnO Thin Film with High c-Axis Preferred Orientation

Pei, Yanli; Liu, Wuguang; Shi, Jingtao; Chen, Zimin; Wang, Gang

doi:10.1007/s11664-016-4816-7

Cited by 16 publications

(11 citation statements)

References 30 publications

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“…To avoid confusion from the contamination and possible oxidation of the film surface during the air exposure before the XPS analysis, the thin surface layer (2–3 nm) was in situ etched using an accelerated (1 kV) Ar + ion before the spectrum acquisition. The Sn 3d peaks could be deconvoluted to two components with binding energies of 484.7 eV (Sn 0 ) and 486.2 eV (Sn 2+ ), without involving the peak at 486.9 eV, which corresponds to Sn 4+ even in the case of zero Sn dc power. − The binding energy was calibrated with the C 1s peak position (284.6 eV). Therefore, it can be understood that the possible formation of SnO 2 was well-suppressed under the entire process conditions.…”

Section: Resultsmentioning

confidence: 99%

Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor

Lee

Jang

Kim

et al. 2018

ACS Appl. Mater. Interfaces

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p-Type SnO thin films were deposited on a Si substrate by a cosputtering process using ceramic SnO and metal Sn targets at room temperature without adding oxygen. By varying the dc sputtering power applied to the Sn target while maintaining a constant radio frequency power to the SnO target, the Sn/O ratio varied from 56:44 to 74:26 at the as-deposited state. After thermal annealing at 180 °C for 25 min under air atmosphere using a microwave annealing system, the films were crystallized into tetragonal SnO when the Sn/O ratio increased from 44:56 to 57:43. Notably, the metallic Sn remained when the Sn/O ratio was higher than 55:45 at an annealed state. When the ratio was lower than 55:45 at the annealed state, the incorporated Sn fully oxidized to SnO, making the films useful p-type semiconductors, whereas the films became metallic conductors at higher Sn/O ratios. At the Sn/O ratio of 55:45 at the annealed state, the film showed the highest Hall mobility of 8.8 cm V s and a hole concentration of 5.4 × 10 cm. Interestingly, the electrical conduction behavior showed trap-mediated hopping when the Sn metal was cosputtered, whereas the single SnO film showed regular band conduction behavior. The residual stress effect could interpret such property variation originated from the sputtering power and postoxidation-induced volumetric effects. This report makes a critical contribution to the in-depth understanding of the composition-structure-property relationship of this technically important thin film material.

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Section: Resultsmentioning

confidence: 99%

Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor

Lee

Jang

Kim

et al. 2018

ACS Appl. Mater. Interfaces

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“…76 On the other hand, Pei et al reported highly stable SnO layers reaching their highest crystalline quality during RTA (with unspecified annealing time) at 700 • C in nitrogen. 16 Interestingly, Yabuta et al demonstrated that a SiO x capping layer preseves the SnO layer by preventing oxygen exchange with the environment using annealing experiments in nitrogen, oxygen and air at 400 • C. 77 We note, however, that a capping layer cannot prevent disproportionation of the film at temperatures above ≈ 400 • C (cf. Fig1).…”

Section: Stability Of the Sno Phase After Growthmentioning

confidence: 86%

“…10 The observed p-type conductivity of unintentionally doped (UID) SnO has been correlated by first-principle calculations with Sn vacancies 14 or their complexes with hydrogen 15 acting as shallow acceptors, whereas oxygen interstitials were predicted to be electrically inactive. 14,15 SnO thin films have been grown by various methods, such as electron-beam evaporation 16 or reactive DC magnetron sputtering, 13 both followed by thermal annealing, reactive ion beam sputter deposition, 9 pulsed laser deposition (PLD) from an oxide target 10,12,17 or a metallic Sn target 18 , and molecular beam epitaxy (MBE). 8,19,20 The largest challenge for the growth of phase pure SnO is its metastability with respect to its stable relatives Sn and SnO 2 .…”

Section: Introductionmentioning

confidence: 99%

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

Budde

Mazzolini

Feldl

et al. 2020

Phys. Rev. Materials

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Transparent conducting or semiconducting oxides are an important class of materials for (transparent) optoelectronic applications and -by virtue of their wide band gaps -for power electronics. While most of these oxides can be doped n-type only with room-temperature electron mobilities on the order of 100 cm 2 /Vs, p-type oxides are needed for the realization of pn-junction devices but typically suffer from exessively low (< <1 cm 2 /Vs) hole mobilities. Tin monoxide (SnO) is one of the few p-type oxides with a higher hole mobility yet is currently lacking a well-established understanding of its hole transport properties. Moreover, growth of SnO is complicated by its metastability with respect to SnO 2 and Sn, requiring epitaxy for the realization of single crystalline material typically required for high-end applications. Here, we give a comprehensive account on the epitaxial growth of SnO, its (meta)stability, and its thermoelectric transport properties in the context of the present literature. Textured and single-crystalline, unintentionally-doped p-type SnO(001) films are grown on Al 2 O 3 (00.1) and Y 2 O 3 -stabilized ZrO 2 (001), respectively, by plasma-assisted molecular beam epitaxy and the epitaxial relations are determined. The metastability of this semiconducting oxide is addressed theoretically through an equilibrium phase diagram. Experimentally, the related SnO growth window is rapidly determined by an in-situ growth kinetics study as function of Sn-to-O-plasma flux ratio and growth temperature. The presence of secondary Sn and SnO x (1 < x ≤ 2) phases is comprehensively studied by x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and x-ray photoelectron spectroscopy, indicating the presence of Sn 3 O 4 or Sn as major secondary phases, as well as a fully oxidized SnO 2 film surface. The hole transport properties, Seebeck coefficient, and density-of-states effective mass are determined and critically discussed in the context of the present literature on SnO, considering its strongly anisotropic effective hole mass: Hall measurements of our films reveal room temperature hole concentrations and mobilities in the range of 2•10 18 to 10 19 cm −3 and 1.0 to 6.0 cm 2 /Vs, respectively, with consistently higher mobility in the single-crystalline films. Temperature-dependent Hall measurements of the single-crystalline films closest to stoichiometric, phase-pure SnO indicate non-degenerate band transport by free holes (rather than hopping transport) with dominant polar optical phonon scattering at room temperature. Taking into account the impact of acceptor band formation and the apparent activation of the hole concentration by 40-53 meV, we assign tin vacancies rather than their complexes with hydrogen as the unintentional acceptor. The room temperature Seebeck coefficient in our films confirms p-type conductivity by band transport. Its combination with the hole concentration allows us to experimentally estimate the density of states effective hole mass to be in the range of 1 to 8 times ...

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“…19,20 High-quality few-layer SnO has been successfully obtained experimentally via conventional thin-film fabrication methods such as atomic layer deposition 13 and electron beam evaporation. 21 In a study by Saji et al, the growth of SnO has also been reportedly achieved with single-layer precision on sapphire and SiO 2 substrates using pulsed laser deposition. 22 Tin (II) oxide has been widely explored as a p-type channel layer for high-performance TFTs, with field effect mobilities of as high as 1.9 cm 2 V −1 s −1 .…”

Section: Introductionmentioning

confidence: 99%

Strain-driven superplasticity and modulation of electronic properties of ultrathin tin (II) oxide: A first-principles study

Kripalani,

Sun,

Lin

et al. 2019

Preprint

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2D-layered tin (II) oxide (SnO) has recently emerged as a promising bipolar channel material for thin-film transistors and complementary metal-oxide-semiconductor devices. In this work, we present a first-principles investigation of the mechanical properties of ultrathin SnO, as well as the electronic implications of tensile strain ( ) under both uniaxial and biaxial conditions. Bulk-tomonolayer transition is found to significantly lower the Young's and shear moduli of SnO, highlighting the importance of interlayer Sn-Sn bonds in preserving structural integrity. Unprecedentedly, few-layer SnO exhibits superplasticity under uniaxial deformation conditions, with a critical strain to failure of up to 74% in the monolayer. Such superplastic behavior is ascribed to the formation of a tri-coordinated intermediate (referred to here as h-SnO) beyond = 14%, which resembles a partially-recovered orthorhombic phase with relatively large work function and wide indirect band gap. The broad structural range of tin (II) oxide under strongly anisotropic mechanical loading suggests intriguing possibilities for realizing novel hybrid nanostructures of SnO through strain engineering. The findings reported in this study reveal fundamental insights into the mechanical behavior and strain-driven electronic properties of tin (II) oxide, opening up exciting avenues for the development of SnO-based nanoelectronic devices with new, non-conventional functionalities.

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Fabrication and Characterization of p-Type SnO Thin Film with High c-Axis Preferred Orientation

Cited by 16 publications

References 30 publications

Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor

Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

Strain-driven superplasticity and modulation of electronic properties of ultrathin tin (II) oxide: A first-principles study

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