Fabrication and characterization of n- InSb Heterojunction for optoelectronic device

Ali, Hiba M.; Hassun, Hanan K.; Al-Maiyaly, Bushra K. H.; Shaban, Auday H.

doi:10.1016/j.egypro.2018.11.168

Cited by 7 publications

(6 citation statements)

References 6 publications

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“…The transmittance T and absorbance A spectra in the wavelength range (400-1100 nm) of coated materials were measured using a UV/VIS spectrophotometer, and the energy gap was computed using the Tauc equation [17][18]. The combination of atomic force microscopy with a UV-Vis spectrophotometer I-V graph application of the Shockley equation [20] discusses the n-CdTe:Ag/p-Si heterojunction and n-CdTe/p-Si current voltage characteristics. The efficiency of the solar cell was determined [21].…”

Section: Methodsmentioning

confidence: 99%

“…X-ray diffraction was utilized to examine the structure of these films in detail 2ϴ from 20° to 80° with 0.05° intervals. The miller index interplanar spacing d (hkl) was estimated using Bragg's rule [20] and Scherer's Formula, which were also utilized to measure the crystalline size of the films (hkl). The values for the (d), (hkl), and average crystallite size are shown in Table 1.…”

Section: Structural Propertiesmentioning

confidence: 99%

“…The physical qualities of the film rely on the substrate application procedure. CdTe thin films have been fabricated using numerous techniques, including physical vapor deposition [13], pulsed laser deposition [14], RFsputtering [15], close-spaced sublimation [16], hot wall epitaxy [17], successive ionic layer adsorption and reaction methods [18,19], thermal evaporation [20], and elt. The thermal evaporation technique was employed to manufacture undoped and 0.5% Ag-doped CdTe thin films in this study.…”

Section: Introductionmentioning

confidence: 99%

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Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation

Ali¹,

Mustafa²

2023

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We investigated at the optical properties, structural makeup, and morphology of thin films of cadmium telluride (CdTe) with a thickness of 150 nm produced by thermal evaporation over glass. The X-ray diffraction study showed that the films had a crystalline composition, a cubic structure, and a preference for grain formation along the (111) crystallographic direction. The outcomes of the inquiry were used to determine these traits. With the use of thin films of CdTe that were doped with Ag at a concentration of 0.5%, the crystallization orientations of pure CdTe (23.58, 39.02, and 46.22) and CdTe:Ag were both determined by X-ray diffraction. orientations (23.72, 39.21, 46.40) For samples that were pure and those that were doped with silver, the optical band gap shrank by (1.52-1.47) eV (400–1100)nm resulting in a drop in the absorption coefficient. An incident power density of (100 mW/cm2) was used to examine the I-V properties of heterojunctions created by light on a variety of clean and doped materials. In accordance with the X-ray diffraction analysis, the films had a cubic structure and dominated grain growth along the (111) crystallographic direction.

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Section: Methodsmentioning

confidence: 99%

Section: Structural Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation

Ali¹,

Mustafa²

2023

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“…Table (1) provides the traditional Scherre's Equation, which is used to calculate the crystallinity size of Ag2Se thin films. [15][16] (θ) the Bragg's angle,( λ) was the wavelength X-ray equal (1.54056 Ǻ) and (FWHM) the full width half maxima of the main peak .…”

Section: -1 Optics and Structural Investigationmentioning

confidence: 99%

“…Again, the crystallite variety is the reason for this. Using the Tauc relation, the Ag2Se energy gaps are assessed [15].…”

Section: -1 Optics and Structural Investigationmentioning

confidence: 99%

Influence Annealing on the Physical Properties of Silver Selenide Thin Film at Different Temperatures by Thermal Evaporation

Mumtaz

2023

IHJPAS

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This survey investigates the thermal evaporation of Ag2Se on glass substrates at various thermalannealing temperatures (300, 348, 398, and 448) °K. To ascertain the effect of annealingtemperature on the structural, surface morphology, and optical properties of Ag2Se films,investigations and research were carried out. The crystal structure of the film was described by Xraydiffractionandothermethods.ThephysicalstructureandcharacteristicsoftheAg2Sethinfilms wereexaminedusingX-rayandatomicforcemicroscopy(AFM)basedtechniques.TheAg2Se films surface morphology was examined by AFM techniques; the investigation gave averagediameter, surface roughness, and grain size mutation values with increasing annealing temperature(75.74 nm–96.36 nm). Additionally, With various variations to the nominal values, the absorbanceand transmittance spectra are further studied and reported in accordance with the wavelength rangeof (400-1100) nm. The findings indicate that the sample highest absorbance value was attained ata temperature treatment of 448 K, whereas the sample highest transmittance was at a temperaturetreatment of 300 K. According to the results, direct transitions were permitted in the under-reviewthin films at optical energies of (2.15, 1.85, 1.75, and 1.7) eV, respectively

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Effect of solvents on performance of Alq3/ZnO solar cells: A theoretical approach

Maadhede,

Jumali,

Al-Agealy

et al. 2023

Energy Reports

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Fabrication and characterization of n- InSb Heterojunction for optoelectronic device

Cited by 7 publications

References 6 publications

Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation

Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation

Influence Annealing on the Physical Properties of Silver Selenide Thin Film at Different Temperatures by Thermal Evaporation

Effect of solvents on performance of Alq3/ZnO solar cells: A theoretical approach

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