Fabrication and characterization of Mn-doped CuO thin films by the SILAR method

Gülen, Y.; Bayansal, F.; Şahin, Bünyamin; Çetinkara, H.A.; Güder, H.S.

doi:10.1016/j.ceramint.2013.01.077

Cited by 97 publications

(29 citation statements)

References 24 publications

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“…Tauc plots ( αhv ) 2 vs. hv of pure CuO and yttrium doped CuO films given in (Figure b) were used for the calculation of their optical band gap E g energies data given in (Table ), (direct band gap). The calculated E g value for the pure CuO is 2.47 eV which is much broader then reported values ∼1.35–1.7 eV, that may be attributed to the presence of well‐connected concrete layer of pure CuO smaller particles (below 50 nm). The E g values for 0.1 %, 0.50 %, 1.0 % and 2.0 % yttrium doped CuO films are 2.53 eV, 2.57 eV, 2.60 eV and 2.63 eV, respectively.…”

Section: Resultscontrasting

confidence: 59%

Yttrium Doped Copper (II) Oxide Hole Transport Material as Efficient Thin Film Transistor

et al. 2020

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This work reports development of yttrium doped copper oxide (YÀ CuO) as a new hole transport material with supplemented optoelectronic character. The pure and Y-doped CuO thin films are developed through a solid-state method at 200°C and recognized as high performance p-channel inorganic thin-film transistors (TFTs). CuO is formed by oxidative decomposition of copper acetylacetonate, yielding 100 nm thick and conductive (40.9 S cm À 1 ) compact films with a band gap of 2.47 eV and charge carrier density of~1.44 × 10 19 cm À 3 . Yttrium doping generates denser films, Cu 2 Y 2 O 5 phase in the lattice, with a wide band gap of 2.63 eV. The electrical conductivity increases nine-fold on 2 % Y addition to CuO, and the carrier density increases to 2.97 × 10 21 cm À 3 , the highest reported so far. The TFT devices perform remarkably with high field-effect mobility (μ sat ) of 3.45 cm 2 V À 1 s À 1 and 5.3 cm 2 V À 1 s À 1 , and considerably high current-on/off ratios of 0.11 × 10 4 and 9.21 × 10 4 , for CuO and YÀ CuO films, respectively (at À 1 V operating voltage). A very small width hysteresis, 0.01 V for CuO and 1.92 V for 1 % YÀ CuO, depict good bias stability. Both the devices work in enhancement mode with stable output characteristics for multiple forward sweeps (5 to À 60 V) at À 1V g .

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Section: Resultscontrasting

confidence: 59%

Yttrium Doped Copper (II) Oxide Hole Transport Material as Efficient Thin Film Transistor

et al. 2020

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“…Peak intensity changes with the K, Li and Na doping. The crystallite size of the CdO films was calculated from XRD patterns by using Debye Scherrer's formula [10], for the (1 1 1), (2 0 0), (2 2 0), ( 3 1 1) and (2 2 2) planes (see Table 1):…”

Section: Results and Discussion 31 Xrd Analysismentioning

confidence: 99%

Facile synthesis of group-I elements (K, Li and Na)-doped nanostructured CdO films

Şahin

Bayansal

2014

Philosophical Magazine

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In this study, we report an application of facile and low-cost successive ionic layer adsorption and reaction method to investigate nanostructured CdO films. We have tried to enhance some physical properties of nanostructured CdO films by group-I (K, Li and Na) elements doping. The crystal structures, morphology, absorption, transmittance, reflectance behaviour and optical band gap values of CdO films were characterized by using X-ray diffraction (XRD), scanning electron microscopy and ultraviolet-visible spectroscopy techniques. XRD analysis reveals formation of CdO cubic crystalline structure. From these characterizations, it was seen that there are important distinctions in the structural, morphological and optical properties of undoped and K-, Li-and Na-doped nanostructured CdO films.

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“…Actually, the diverse available methods to prepare CuO-CuFe 2 O 4 nanocomposites have been previously published such as co-precipitation, solid state method, oxalate precursor and radio-frequency (RF) sputtered methods [7,8,15,16]. From the best of our knowledge; this the first report on synthesis of CuO/CuFe 2 O 4 nanocomposite via a simple microemulsion.…”

Section: Introductionmentioning

confidence: 95%

“…These doped nanomaterials have been demonstrated to show co-existence of different physical properties like semiconductor and ferromagnetic materials [6][7]. For instance, it is reported that the addition of Fe 3+ ion in copper oxide leads to form CuO/CuFe 2 O 4 nanocomposites [8].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the structural, optical and magnetic properties of CuO/CuFe2O4 nanocomposites synthesized via simple microemulsion method

Rashad

Soltan

Ramadan

et al. 2015

Ceramics International

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Fabrication and characterization of Mn-doped CuO thin films by the SILAR method

Cited by 97 publications

References 24 publications

Yttrium Doped Copper (II) Oxide Hole Transport Material as Efficient Thin Film Transistor

Yttrium Doped Copper (II) Oxide Hole Transport Material as Efficient Thin Film Transistor

Facile synthesis of group-I elements (K, Li and Na)-doped nanostructured CdO films

Investigation of the structural, optical and magnetic properties of CuO/CuFe2O4 nanocomposites synthesized via simple microemulsion method

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