Fabrication and characterization of metal–semiconductor–metal photodetector based on porous InGaN

Abud, Saleh H.; Hassan, Z.; Yam, F.K.

doi:10.1016/j.matchemphys.2013.12.018

Cited by 13 publications

(10 citation statements)

References 28 publications

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“…Although ECE of InGaN in KOH failed to form pores without illumination, it could be that a higher applied potential or N D would allow the formation of pores, but this is not explored [72]. Indeed, ECE of InGaN in a HF based electrolyte does show surface pores, but as these samples were etched under constant current the applied potential is not reported, and N D is not reported for either so it is difficult to make a comparison [70]. We have found that subsurface Si-doped InGaN layers can be porosified in much the same way as GaN layers.…”

Section: Porous Nitrides Other Than Ganmentioning

confidence: 99%

“…This uses a difference in bandgap to select which layers to etch. All the work we could find in the literature to form bulk porous material from In containing nitrides through anodization came from one group and uses both HF and KOH based electrolytes [70,71] and explores the influence of the light source, finding that anodization without illumination produced etching only at grain boundaries and other inhomogeneities, whereas incident light allows the formation of surface pores [72]. This results in a limited pore depth, corresponding to the absorption length of the incident light.…”

Section: Porous Nitrides Other Than Ganmentioning

confidence: 99%

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Porous nitride semiconductors reviewed

Griffin

Oliver

2020

J. Phys. D: Appl. Phys.

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Porous nitride semiconductors are a fast-developing area of study, which open up a wide range of new properties and applications, including strain free optical reflectors, chemical sensors and as a pathway to device lift-off. This article reviews the current progress in porous nitrides formed through electrochemical and photoelectrochemical methods. Using a simple electrochemical cell, pores are formed by injecting holes into the surface layer in order to oxidise the material into a soluble form and releasing nitrogen gas. The process is controlled principally by the electric field that drives the injection of holes and hence the applied potential and doping density are the key parameters for controlling pore morphology, along with how and whether illumination is used. We describe the mechanisms responsible for this process in detail and outline the trends for changing pore size and pore shape. For example, larger applied potential creates a larger electric field and hence larger pores. These methods have been used to produce a wide variety of different structures. We present a layered porous structure created by the modulation of the applied potential. Alternatively, layered structures can be produced by growing alternate doped and non-intentionally doped layers. Electrochemical etching can then create pores only in the doped layers, as they are conductive. This process can be performed by etching laterally through access trenches that expose the doped material or through the etching of dislocations to create nanopipes that allow subsurface porosity to form. This process requires no prior processing steps. We combine this method with patterning of surface protective layers to influence where the resulting pores grow. Based on these various fabrication processes, significant progress has been made towards applications of porous GaN across optoelectronics, sensing and for improving material quality.

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Section: Porous Nitrides Other Than Ganmentioning

confidence: 99%

Section: Porous Nitrides Other Than Ganmentioning

confidence: 99%

Porous nitride semiconductors reviewed

Griffin

Oliver

2020

J. Phys. D: Appl. Phys.

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“…Meanwhile, the sample prepared at 25 mA/cm 2 displayed the highest leakage current which may arise from other current transport mechanisms. In fact, if the thermionic emission over the barrier is neglected, then the current transport mechanism may include the direct tunneling of carriers [16]. Meanwhile, the sample prepared at 35 mA/cm 2 showed lowest value of leakage current, indicating that the electrical properties are improved.…”

Section: Current-voltagementioning

confidence: 99%

“…However, most of these outperforming metals are unstable at high temperature due to severe interdiffusion at the metalsemiconductor interface [15]. Platinum, being an interesting functional metal with excellent thermal and chemical properties, is extensively used as a stable Schottky contact in wide band gap InGaN [16].…”

Section: Introductionmentioning

confidence: 99%

Responsivity Dependent Anodization Current Density of Nanoporous Silicon Based MSM Photodetector

Al-Jumaili

Talib

Ramizy

et al. 2016

Journal of Nanomaterials

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Achieving a cheap and ultrafast metal-semiconductor-metal (MSM) photodetector (PD) for very high-speed communications is ever-demanding. We report the influence of anodization current density variation on the response of nanoporous silicon (NPSi) based MSM PD with platinum (Pt) contact electrodes. Such NPSi samples are grown from n-type Si (100) wafer using photoelectrochemical etching with three different anodization current densities. FESEM images of as-prepared samples revealed the existence of discrete pores with spherical and square-like shapes. XRD pattern displayed the growth of nanocrystals with (311) lattice orientation. The nanocrystallite sizes obtained using Scherrer formula are found to be between 20.8 nm and 28.6 nm. The observed rectifying behavior in the I-V characteristics is ascribed to the Pt/PSi/n-Si Schottky barrier formation, where the barrier height at the Pt/PSi interface is estimated to be 0.69 eV. Furthermore, this Pt/PSi/Pt MSM PD achieved maximum responsivity of 0.17 A/W and quantum efficiency as much as 39.3%. The photoresponse of this NPSi based MSM PD demonstrated excellent repeatability, fast response, and enhanced saturation current with increasing anodization current density.

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“…The attractiveness of GaN NPFs resides in their significant strain relaxation , and enhanced surface Raman scattering . Comparing with their compact counterparts, GaN NPFs have demonstrated improved properties in diverse applications such as photoelectrochemical water splitting, − supercapacitors for energy storage, , light emitting diodes (LEDs), ,,− distributed Bragg reflectors, or mechanic removal of films from the substrate. , The research on NPFs is not limited to GaN: different materials such as nanoporous InGaN, − Si, carbon membranes, and WO 3 have demonstrated a great potential for photoelectrochemical water splitting ,, and photocatalytic fuel cells …”

Section: Introductionmentioning

confidence: 99%

Porosity Control for Plasma-Assisted Molecular Beam Epitaxy of GaN Nanowires

Gómez

Santos

Blanco

et al. 2019

Crystal Growth & Design

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We report on the bottom-up fabrication, by plasma-assisted molecular beam epitaxy, of monocrystalline GaN solid, hollow, and c-shape nanowires deposited in a compact fashion. The shape exhibited by these nanostructures varies from solid to c-shape and hollow nanowires. They were epitaxially grown with their [0001] directions perpendicular with respect to different surfaces of Si substrates. Advanced studies of these GaN nanostructures were carried out by means of selected-area electron diffraction and scanning and high-resolution transmission electron microscopy evidencing their structure and epitaxial alignments with respect to the silicon. Through a comprehensive analysis of the growth conditions (substrate temperature and Ga and N* fluxes) we demonstrate that a local Ga-limited regime is the mechanism behind the particular shape of these nanostructures. Additionally, spectroscopic ellipsometry studies, applying a model based on Bruggeman effective medium approximations and taking into account several aspects related to the nature of these GaN nanostructures, were carried out to obtain valuable information about the evolution of the optical constants and the porosity along the layer. This work shows a way to control the porosity and shape of GaN nanowires by varying the growth conditions, which could open new horizons in the development of GaN nanostructures for future applications.

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Fabrication and characterization of metal–semiconductor–metal photodetector based on porous InGaN

Cited by 13 publications

References 28 publications

Porous nitride semiconductors reviewed

Porous nitride semiconductors reviewed

Responsivity Dependent Anodization Current Density of Nanoporous Silicon Based MSM Photodetector

Porosity Control for Plasma-Assisted Molecular Beam Epitaxy of GaN Nanowires

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