Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

Schlotter, P.; Baur, J.; Hielscher, Ch; Kunzer, M.; Obloh, H.; Schmidt, Ralf; Schneider, J.

doi:10.1016/s0921-5107(98)00352-3

Cited by 233 publications

(122 citation statements)

References 4 publications

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“…Doping such materials with Ce 3+ or Eu 2+ can lead to strong absorption in the near-UV to blue spectral range combined with efficient emission in the visible. For example, oxides like Y 3 Al 5 O 12 :Ce 3+ (YAG:Ce) or sulfides like CaS:Eu 2+ are currently applied in phosphor-converted LEDs (pcLEDs) as luminescence converters [1,2]. Nevertheless, pronounced temperature quenching of luminescence and low chemical stability restricts their use in LED lighting applications where a long device life time under harsh conditions is required.…”

Section: Introductionmentioning

confidence: 99%

Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions

Bachmann

Jüstel

Meijerink

et al. 2006

Journal of Luminescence

222

158

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The optical properties of SrSi 2 O 2 N 2 doped with divalent Eu 2+ and Yb 2+ are investigated. The Eu 2+ doped material shows efficient green emission peaking at around 540 nm that is consistent with 4f 7 -4f 6 5d transitions of Eu 2+ . Due to the high quantum yield (90%) and high quenching temperature (4500 K) of luminescence, SrSi 2 O 2 N 2 :Eu 2+ is a promising material for application in phosphor conversion LEDs. The Yb 2+ luminescence is markedly different from Eu 2+ and is characterized by a larger Stokes shift and a lower quenching temperature. The anomalous luminescence properties are ascribed to impurity trapped exciton emission. Based on temperature and time dependent luminescence measurements, a schematic energy level diagram is derived for both Eu 2+ and Yb 2+ relative to the valence and conduction bands of the oxonitridosilicate host material. r

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Section: Introductionmentioning

confidence: 99%

Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions

Bachmann

Jüstel

Meijerink

et al. 2006

Journal of Luminescence

222

158

View full text Add to dashboard Cite

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“…Major developments in wide band gap III-V nitride compound semiconductors have led to the commercial production of high efficiency LEDs. [1][2][3][4] Traditional colored LEDs have proven effective in signal applications, as indicator lights, and in automotive lightning. The development of white LEDs as a cost-competitive, energy-efficient alternative to conventional electrical lightning is very important for expanding LED applications toward general white lightning.…”

Section: Introductionmentioning

confidence: 99%

Preparation, Characterization and Photoluminescence Properties of Ca_1-xSr_xS:Eu Red-emitting Phosphors for a White LED

2007

Bulletin of the Korean Chemical Society

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“…It emits blue light typically in the range of 400-480 nm. [3][4][5] Since blue LEDs emit light with a shorter wavelength than red ones, it is possible to develop a suitable and intense yellow light-emitting phosphor that can complement the blue emission to yield ideal white light. 6 Shimizu et al 7 reported various phosphor LEDs that generate white light having a color temperature between 5000 and 6000 K. Out of all the phosphor LEDs described, cerium-doped yttrium-aluminate-garnet ͑YAG: Ce͒ phosphor was found to be the most suitable phosphor satisfactorily tested on GaN LEDs for the production of white light.…”

mentioning

confidence: 99%

Enhanced luminescence of Y3Al5O12:Ce3+ nanophosphor for white light-emitting diodes

Haranath¹,

Chander²,

Sharma³

et al. 2006

Applied Physics Letters

162

103

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Results pertaining to the development of highly dispersible stand-alone particles of Ce 3+ -doped Y 3 Al 5 O 12 nanophosphor and their luminescence are presented. The yellow light-emitting nanophosphor was produced as a result of a single-step auto-combustion process, which requires no auxiliary annealing treatments prior to any practical application. The structure, photoluminescence, and chromaticity of the powder nanophosphor samples with the compositions Y ͑3−x͒ Al 5 O 12 : xCe 3+ ͑x = 0.01-1͒ are featured in the letter. The nanophosphor absorbs light efficiently in the visible region of 400-500 nm, and shows single broadband emission peaking at ϳ560 nm. The luminescence yield is almost analogous to the samples made from other conventional methods. Hence, it could be an apt candidate for generating white light when coupled to a blue light-emitting diode ͑ em = 450 nm͒.

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Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

Cited by 233 publications

References 4 publications

Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions

Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions

Preparation, Characterization and Photoluminescence Properties of Ca_1-xSr_xS:Eu Red-emitting Phosphors for a White LED

Enhanced luminescence of Y3Al5O12:Ce3+ nanophosphor for white light-emitting diodes

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Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

Cited by 233 publications

References 4 publications

Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions

Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions

Preparation, Characterization and Photoluminescence Properties of Ca1-xSrxS:Eu Red-emitting Phosphors for a White LED

Enhanced luminescence of Y3Al5O12:Ce3+ nanophosphor for white light-emitting diodes

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Preparation, Characterization and Photoluminescence Properties of Ca_1-xSr_xS:Eu Red-emitting Phosphors for a White LED