Fabrication and characterization of freestanding Si/Cr micro- and nanospirals

Fabrication and Characterization of Self-scrolling Si/Cr Micro- and Nanostructures

“…4(a-d). No significant change in its curvature due to the extension was observed, which means these freestanding spirals have a strong "memory" of their shape after being formed [18]. However, sometimes it can happen that the tungsten probe binds to the inner wall of the spiral by van der Waals force and the nanospiral fractures locally as shown in Fig 4(e-h).…”

“…The reason for adopting the evaporation technique is that it is much more efficient for deposition and low cost. However, when the Si/Cr bilayers stripes are reduced to the submicron range, the situation is more complicated [18]. On the one hand, the scrolling direction of the Si/Cr bilayers stripes shift from <100> to the longitudinal axis of the stripe and form nanorings; on the other hand, the diameter of the nanorings decreases with the reduced stripe width.…”

Edge effect of strained bilayer nanofilms for tunable multistability and actuation

“…Previous experimental studies on Si/Cr strips have confirmed that the scrolling behavior and the diameter of the rolled-up structures can depend on the layer thickness, 8 the strip width, 9, 10 the misorientation angle between the strip axis and the preferred scrolling orientation, 11 and anisotropic underetching on different Si substrates. 12 Additional surface and edge effects also play a role in strained microstructures, 13, 14 which provides additional freedom when designing 3D geometries.…”

The Strained-SiGe Relaxation Induced Underlying Si Defects Following the Millisecond Annealing for the 32 nm PMOSFETs

“…When implantation is performed using medium projection range Rp to induce 51% relaxation of the strainedSiGe, the film stress, σ SG , was reduced by a factor (1-R) showing lower shear yielding stress for deformation during MSA thermal stress, 24,25 and was then too small to resist the MSA tensile stress and the relaxed strained-SiGe wafer buckled in the maximum tensile state. This phenomenon is described by a second moment of inertia, 26 which demonstrates that a suddenly large deformation or over-bending occurred when the applied force exceeded a critical stress or over shear stress for yielding. At the experimental condition, while strained-SiGe relaxation is over around 20%, large SiGe wafer bending occurred under applying MSA tensile stress corresponding to the concept of the second moment of inertia.…”