Fabrication and characterization of dry and wet etched InGaAs/InGaAsP/InP long wavelength semiconductor lasers

Çakmak, Bülent

doi:10.1364/oe.10.000530

Cited by 11 publications

(8 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nanomaterials have received an increasing interest for their novel properties, especially for their optical properties [1][2][3][4]. Thus many implements such as light-emitting diodes (LEDs) and laser diodes (LDs) based on their quantum optical effects are fabricated [5,6], while few based on the classic effects (e.g., the thermal radiation from nanomaterials) are obtained. Recently, high efficient laser-induced white and bright emission from nano-carbon in Crookes radiometer (also named light mill) is observed accidentally when the laser intensity is over a threshold (1 kW/cm 2 -1 MW/cm 2 ) [7,8].…”

Section: Introductionmentioning

confidence: 99%

Electromagnetic excitation of nano-carbon in vacuum

Wang¹,

Hu²,

Zhang³

et al. 2005

Opt. Express

View full text Add to dashboard Cite

Nano-carbon as lighting source is demonstrated in this paper. The characterized nano-radiation from nano-carbon, excited by different lasers in vacuum, is observed when laser intensity is over a threshold. With lower excitation threshold and smaller white light source, nano-carbon is more applicable to be as lighting system than the others in scientific experiments. White light emission of nano-carbon induced by more practicable electromagnetic excitation (microwave) is also demonstrated, which is caused by the faradic heating of the metal substrates, with molecular spectra and better color rendering. Lighting systems comprised of nano-carbon may become one of the considerable directions in optics.

show abstract

Section: Introductionmentioning

confidence: 99%

Electromagnetic excitation of nano-carbon in vacuum

Wang¹,

Hu²,

Zhang³

et al. 2005

Opt. Express

View full text Add to dashboard Cite

show abstract

“…In the fabrication of optical waveguide structures, it is often required to form elements with a high anisotropy (waveguides, gratings, splitters, etc.) while maintaining a smooth surface morphology [6][7][8][9][10]. The methods of plasma chemical etching used for such structures include reactive ion etching (RIE), reactive ion etching in inductively coupled plasma (ICP), electron cyclotron resonance (ECR), and chemically assisted ion beam etching (CAIBE) [6,[9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…while maintaining a smooth surface morphology [6][7][8][9][10]. The methods of plasma chemical etching used for such structures include reactive ion etching (RIE), reactive ion etching in inductively coupled plasma (ICP), electron cyclotron resonance (ECR), and chemically assisted ion beam etching (CAIBE) [6,[9][10][11][12][13]. One of the most widely used methods is reactive ion etching in inductively coupled plasma.…”

Section: Introductionmentioning

confidence: 99%

The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl2-Based Plasma for Integrated Optics Applications

et al. 2021

View full text Add to dashboard Cite

Chlorine processes are widely used for the formation of waveguide structures in InP-based optoelectronics. Traditionally, ICP etching of InP in a Cl2-based plasma requires substrate temperatures in the range of 150–200 °C. This condition is mandatory, since during the etching process low-volatility InClx components are formed and at insufficient temperatures are deposited onto substrate, leading to the formation of defects and further impossibility of the formation of waveguide structures. The need to preheat the substrate limits the application of chlorine processes. This paper presents a method of ICP etching an InP/InGaAsP heterostructure in a Cl2/Ar/N2 gas mixture. A feature of the developed method is the cyclic etching of the heterostructure without preliminary heating. The etching process starts at room temperature. In the optimal etching mode, the angle of inclination of the sidewalls of the waveguides reached 88.8° at an etching depth of more than 4.5 μm. At the same time, the surface roughness did not exceed 30 nm. The selectivity of the etching process with respect to the SiNx mask was equal to 9. Using the developed etching method, test integrated waveguide elements were fabricated. The fabricated active integrated waveguide (p-InP epitaxial layers were not removed) with a width of 2 μm demonstrated an optical loss around 11 ± 1.5 dB/cm at 1550 nm. The insertion loss of the developed Y- and MMI-splitters did not exceed 0.8 dB.

show abstract

“…Among III-V semiconductors, indium arsenide nanostructures have found numerous applications in optics 1 thermophotovoltaics, 2 high-speed electronics, 3 micro-, photo-and nanoelectronics 4,5 due to its narrow band gap and high electron mobility as well as the ohmic contact of many metals with InAs. [6][7][8][9][10] Among them are mid-wave infrared and long-wave infrared detectors, light emitting diodes, lasers diode, heterojunction bipolar transistors, and high electron mobility transistors as well as biological sensor.…”

Section: Introductionmentioning

confidence: 99%

Numerical investigation of the plasma-aided fabrication of stoichiometric InAs nanodots at early stage of the growth

Alizadeh

Mehdipour

Goh

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

Using numerical modeling of the plasma sheath and key surface processes, the plasma-aided fabrication of InAs nanodots is investigated at early stage of the growth. Roles of different plasma process parameters, such as electron temperature, electron number density, and ion-to-electron density ratio, in achieving the stoichiometric growth of the nanodots are explored and conditions to achieve a highly stoichiometric InAs composition are discussed. It is shown that the nanodots get larger with increasing the electron temperature and electron number density, whereas they shrink in size with increasing the ion-to-electron density ratio. Moreover, it is shown that with increase in the electron temperature and electron number density stoichiometric saturation state can be reached shortly, which this enables the fabrication of highly stoichiometric array of nanodots within shorter processing time. The results obtained can open a path toward nucleation and growth of an array of nanodots with desired structural composition and size distribution.

show abstract

Fabrication and characterization of dry and wet etched InGaAs/InGaAsP/InP long wavelength semiconductor lasers

Cited by 11 publications

References 0 publications

Electromagnetic excitation of nano-carbon in vacuum

Electromagnetic excitation of nano-carbon in vacuum

The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl2-Based Plasma for Integrated Optics Applications

Numerical investigation of the plasma-aided fabrication of stoichiometric InAs nanodots at early stage of the growth

Contact Info

Product

Resources

About