2021
DOI: 10.1016/j.tsf.2020.138440
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Fabrication and characterization of copper (II) oxide/iron (III) oxide thin film heterostructures for trace arsenic (III) removal in water

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Cited by 8 publications
(3 citation statements)
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“…This band gap energy value for CuO nanoparticles is slightly higher than theoretical bandgap value 1.8 eV. Generally, the band gap increases with decreasing particle size due to quantum confinement [15]. But the band gap does not follow the same trend always, and it can be affected by other parameters, also like defects present in the oxides.…”
Section: 3optical Propertiesmentioning
confidence: 63%
“…This band gap energy value for CuO nanoparticles is slightly higher than theoretical bandgap value 1.8 eV. Generally, the band gap increases with decreasing particle size due to quantum confinement [15]. But the band gap does not follow the same trend always, and it can be affected by other parameters, also like defects present in the oxides.…”
Section: 3optical Propertiesmentioning
confidence: 63%
“…Moreover, Pastrana et al [71] fabricated heterostructures based on CuO/α-Fe 2 O 3 by dip-coating technique. Due to their rough structure, these heterostructures present efficient and fast arsenic removal performances compared to pure oxides.…”
Section: Heterostructures Based On Cuomentioning
confidence: 99%
“…The higher removal efficiency of heterostructures compared to pristine oxides is mainly due to roughness and the slower recombination of electron-hole pairs for the heterostructures. Many researchers claim that the increase of the surface roughness may favor the adsorption of molecules on the surface films [71] and that the inhibition of recombination of charge carriers will produce a more significant amount of reactive oxygen species, which are intermediates to oxidize As(III) to As(V) [72]. Thin Film Deposition -Fundamentals, Processes, and Applications…”
Section: Heterostructures Based On Cuomentioning
confidence: 99%