Fabrication and Characterization of Capacitive RF MEMS Perforated Switch

Rao, K. Srinivasa; Thalluri, Lakshmi Narayana; Guha, Koushik; Sravani, K. Girija

doi:10.1109/access.2018.2883353

Cited by 48 publications

(7 citation statements)

References 47 publications

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“…In addition, the processing techniques for RF MEMS switches are relatively mature [18], while the integration with the antenna is relatively high in terms of the manufacturing process. It shows great potential in designing millimeter wave reconfigurable antennas [19]. RF MEMS switches are therefore used to electronically control the antenna frequency in this paper.…”

Section: Design Of the Rf Mems Switchmentioning

confidence: 99%

An L-Slot Frequency Reconfigurable Antenna Based on MEMS Technology

Chen,

Guo,

Liu

et al. 2023

Micromachines

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Given the shortage of spectrum resources and the demand for communication systems of diminutive size, multi-function, and adaptive characteristics, this paper proposes an L-slot frequency reconfigurable antenna based on the MEMS switch. The antenna size is 4.07 × 5.27 mm2 and is suitable for the U-band. The antenna structure consists of two RF MEMS switches, a Rogers RT5880 dielectric substrate, an L-slot patch, and a full-coverage ground. The switch is of a series contact structure and is arranged at the corner of an L-slot. By controlling the on and off state of the switch, the antenna can switch between four states of 42.36, 47.65, 53.13, and 56.72 GHz. According to the simulation results in CST STUDIO SUITE 2018, the maximum gain of the antenna is 7.90 dB, the impedance bandwidth of each state is above 1 GHz, and the direction is mainly consistent. The antenna can meet the demand for multi-frequency millimeter wave communication.

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Section: Design Of the Rf Mems Switchmentioning

confidence: 99%

An L-Slot Frequency Reconfigurable Antenna Based on MEMS Technology

Chen,

Guo,

Liu

et al. 2023

Micromachines

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“…These meanders increases the quality of the transmitting signal by decreasing the insertion loss and increasing isolation. Each meander comprises of rectangular blocks and the spring constant of the each block is given by [10].…”

Section: Theoretical Analysis a Spring Constantmentioning

confidence: 99%

Design and Performance Analysis of Low Pull-In Voltage of Dimple Type Capacitive RF MEMS Shunt Switch for Ka-Band

et al. 2019

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This paper deals with the study of dimple type RF MEMS capacitive shunt switch using different meandering techniques for high isolation and low actuation voltage. The novelty of the proposed RF MEMS switch is it incorporates the meanders and dimples, which help to reduce the actuation voltage. The proposed switch structure is optimized, designed, and simulated with FEM analysis such as electromechanical and electromagnetic by using COMSOL and HFSS tools respectively. The best performance of the switch is observed by varying different parameters such as beam material, beam thickness, dielectric thickness, and airgap. The proposed switch with different meandering techniques attains the pull-in voltage in the range of 10.3-46 V, particularly the three uniform meander technique has low actuation voltage of 10.3 V. The RF performance of the device is particularly tuned in the range of 26.5-40 GHz frequency range and it is analyzed for all types of meanders. Among them, the non-uniform single meander has attained the best isolation of −54.13 dB at 40 GHz in the off state. The insertion and return losses of the device are −0.514 dB and −17.35 dB over 1-40 GHz frequency in on state.

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“…Due to the low deposition rates, the thickness of RF magnetron-sputtered ZnO films is often limited to a couple of micrometers or less. Moreover, the fabrication tolerance and yield of thin-film ZnO lateral-extensional mode resonators are affected by the releasing step, as the residual stress causes suspended ZnO structural layers to buckle or even fracture [ 13 , 14 , 15 , 16 , 17 , 18 , 19 ]. To circumvent these issues, this work investigates the employment of a nickel thin film, which is deposited by a low-temperature electroplating process, as the acoustic structural material for the vibrating micromechanical resonator body.…”

Section: Introductionmentioning

confidence: 99%

“…Piezoelectric transduction mechanisms have been exploited for lowering a resonator's motional resistance [12][13][14][15][16][17]. By taking full advantage of the strong piezoelectric coefficient of sputtered c-axis-aligned ZnO thin films, this work investigates ZnO-on-nickel lateral-extensional mode resonators that are capable of realizing high electromechanical coupling (kt 2 ) and low motional impedances.…”

Section: Introductionmentioning

confidence: 99%

Lateral Extensional Mode Piezoelectric ZnO-on-Nickel RF MEMS Resonators for Back-End-of-Line Integration

et al. 2023

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High motional resistance and incompatibility with post-CMOS fabrication due to thermal budget constraints are imperative issues associated with the back-end-of-line integration of lateral extensional vibrating micromechanical resonators. This paper presents piezoelectric ZnO-on-nickel resonators as a viable means for mitigating both of the issues. Lateral extensional mode resonators equipped with thin-film piezoelectric transducers can exhibit much lower motional impedances than their capacitive counterparts due to piezo-transducers’ higher electromechanical coupling coefficients. Meanwhile, the employment of electroplated nickel as the structural material allows the process temperature to be kept lower than 300 °C, which is low enough for the post-CMOS resonator fabrication. In this work, various geometrical rectangular and square plates resonators are investigated. Moreover, parallel combination of several resonators into a mechanically coupled array was explored as a systematic approach to lower motional resistance from ~1 kΩs to 0.562 kΩs. Higher order modes were investigated for achieving higher resonance frequencies up to 1.57 GHz. Local annealing by Joule heating was also exploited for quality factor improvement after device fabrication by ~2× enhancement and breaking the record of MEMS electroplated nickel resonators in lowering insertion loss to ~10 dB.

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Fabrication and Characterization of Capacitive RF MEMS Perforated Switch

Cited by 48 publications

References 47 publications

An L-Slot Frequency Reconfigurable Antenna Based on MEMS Technology

An L-Slot Frequency Reconfigurable Antenna Based on MEMS Technology

Design and Performance Analysis of Low Pull-In Voltage of Dimple Type Capacitive RF MEMS Shunt Switch for Ka-Band

Lateral Extensional Mode Piezoelectric ZnO-on-Nickel RF MEMS Resonators for Back-End-of-Line Integration

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