Fabrication and characterization of c-Si/porous-Si/CdS/ZnxCd1-xO heterojunctions for applications in nanostructured solar cells

Mamedov, H. M.; Muradov, M. B.; Kukovecz, Ákos; Kordás, Krisztián; Shah, S. İsmat; Mamedova, V. J.; Ahmedova, Khumar M.; Tagiyev, Elgun B.; Mamedov, Vusal U.

doi:10.4302/plp.v10i3.813

Cited by 3 publications

(7 citation statements)

References 15 publications

(15 reference statements)

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“…It is assumed that this is due to light absorption in porous silicon. The slight shifting of a short-wavelength peak in both type of heterojunctions to the more short-wavelength region of the spectrum, with increasing pores size (for PSCD2), is associated by us with the nano-structural properties of CdS and Cd 0.4 Zn 0.6 O films [19][20][21][22]. However, an increase of the optical path of light in nanostructured films leads to an increase of degree of the light absorption; therefore, heterojunctions based on PSCD2 show greater efficiency compared to heterojunctions based on PSCD1 ( Table 5).…”

Section: Photosensitivity Of P-simentioning

confidence: 75%

“…Before anodizing, the c-Si surface was cleaned from the SiO 2 oxide layer as well as contaminants, in an aqueous solution of hydrofluoric acid (HF), washed with deionized water at a temperature of 80°C and ethyl alcohol, and then dried in air. Anodizing of the c-Si substrate surface was carried out in a Teflon chamber with a platinum cathode [19,20].…”

Section: Preparation P-si/ps (Or Pscd)/cds and P-si/ps (Or Pscd)/ CD mentioning

confidence: 99%

“…Electrochemical deposition of CdS and Cd 0.4 Zn 0.6 O films onto the c-Si/PS and c-Si/PSCD substrates was carried out at a temperature of 80°C in an aqueous solution of CdCl 2 + Na 2 S 2 O 3 and Zn(NO 3 ) 2 + Cd(NO 3 ) 2 (99.5% purities) salts, respectively (Table 1) [19][20][21]. Cyclic voltammetry based on obtaining and decoding the current-voltage dependences of the polarized electrode-electrolyte solution interface was used to control electrochemical reactions in each solution, and then in their combined solution with the same concentration and pH.…”

Section: Preparation P-si/ps (Or Pscd)/cds and P-si/ps (Or Pscd)/ CD mentioning

confidence: 99%

“…Therefore, for the purpose of comparison, the results of investigations of the morphological, electrical, and photoelectrical parameters of heterojunctions p-Si/ CdS and p-Si/Cd 0.4 Zn 0.6 O based on PS [19,20] and PSCD are considered in this chapter.…”

Section: Introductionmentioning

confidence: 99%

“…Spectral distribution of photocurrent for heterojunctions c-Si/PSCD/CdS and c-Si/PSCD/Cd 0.4 Zn 0.6 O based on PSCD1 and PDCS2 substrates[19][20][21][22].…”

mentioning

confidence: 99%

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Nanostructured Silicon Sensors

Mamedov¹

2020

Multilayer Thin Films - Versatile Applications for Materials Engineering

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Nanostructure porous silicon layers with systematically varied pore size of 8-70 nm were fabricated onto the p-type c-Si wafers using electrochemical anodizing method from HF + ethanol and HF + ethanol + CdCl 2 solutions (hereafter PS and PSCD, respectively). Gas and photo sensors based on c-Si/PS (or PSCD)/ CdS and c-Si/PS/Cd 0.4 Zn 0.6 O heterojunctions were synthesized by depositing CdS and Cd 0.4 Zn 0.6 O films onto the c-Si/PS (or PSCD) substrates by electrochemical deposition (ED hereafter). The morphology of the PS and PSCD layers, CdS, and Cd 0.4 Zn 0.6 O films was studied using scanning electron microscopy (SEM). Gas-and photosensitivity properties of heterojunctions were studied as a function of pore size. The optimal pore size is determined, which provides the maximum gas-and photosensitivity of heterojunctions in this study. It was established that the heterojunctions based on PSCD possess higher gas-and photosensitivity than heterojunctions based on PS.

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Section: Photosensitivity Of P-simentioning

confidence: 75%

Section: Preparation P-si/ps (Or Pscd)/cds and P-si/ps (Or Pscd)/ CD mentioning

confidence: 99%

Section: Preparation P-si/ps (Or Pscd)/cds and P-si/ps (Or Pscd)/ CD mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Spectral distribution of photocurrent for heterojunctions c-Si/PSCD/CdS and c-Si/PSCD/Cd 0.4 Zn 0.6 O based on PSCD1 and PDCS2 substrates[19][20][21][22].…”

mentioning

confidence: 99%

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Nanostructured Silicon Sensors

Mamedov¹

2020

Multilayer Thin Films - Versatile Applications for Materials Engineering

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PHOTOELECTRICAL PROPERTIES OF p-Si/Cd1-xZnxS(Se)1-ySe(Te)y HETEROJUNCTIONS

MAMMADOV¹,

JAFAROV²,

NASIROV³

et al. 2021

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In this paper the photoelectrical properties of p-Si/Cd1-xZnxS(Se)1-ySe(Te)y type thin film heterojunctions in a wide range of wavelengths (300 - 1400 nm) were characterized depending on the quantitative composition (0≤x≤1 and 0≤y≤1) of Cd1-xZnxS(Se)1-ySe(Te)y type films, electrochemical deposition potential, mode and medium of heat treatment (HT). In order to clarify the effect of these factors on the photoelectric properties and basic parameters of heterojunctions with different composition, the spectral distribution of photoconductivity, volt-ampere characteristics (I-U characteristics), amper-light characteristics were studied.

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Nanostructured Cu2ZnSnS4 Thin Films on Porous-Si Wafer

Jafarov¹,

Nasirov²,

Jahangirova³

et al. 2019

J. Mater. Appl.

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Nanostructure CZTS thin film was fabricated by electrodeposition technique. To manufacture the heterojunctions, p-type c-Si wafers of (100) orientation were used as a substrate. Before anodization, the surface of the c-Si substrates were etched in an aqueous solution of HF and further washed in distilled water (at temperature of 80°С and ethyl alcohol and then dried in air. The current-voltage characteristics of the CZTS /PS solar cell under dark conditions show that forward bias current variation approximately exponentially with voltage bias. The capacitance for Nano- CZTS /PS Solar Cell decreases with the increase of the reverse bias voltage and with the increasing of etching time of nPS layers. That heterojunctions demonstrate good photo-response in the wavelength range of 510 - 650 nm.

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Fabrication and characterization of c-Si/porous-Si/CdS/ZnxCd1-xO heterojunctions for applications in nanostructured solar cells

Abstract: Solar cells based on c-Si/porous-Si/CdS/ZnxCd1-xO

Cited by 3 publications

References 15 publications

Nanostructured Silicon Sensors

Nanostructured Silicon Sensors

PHOTOELECTRICAL PROPERTIES OF p-Si/Cd1-xZnxS(Se)1-ySe(Te)y HETEROJUNCTIONS

Nanostructured Cu2ZnSnS4 Thin Films on Porous-Si Wafer

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