Fabrication and Characterization of a Nanowire/Polymer-Based Nanocomposite for a Prototype Thermoelectric Device

Abramson, Alexis R.; Kim, Woo Chul; Huxtable, Scott T.; Yan, Haoquan; Wu, Yiying; Majumdar, Arun; Tien, C. L.; Yang, Peidong

doi:10.1109/jmems.2004.828742

Cited by 130 publications

(82 citation statements)

References 37 publications

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“…In order to achieve ZT ~3 at room temperature, it is suggested that InSb NWs of small diameter (~30 nm) are necessary [201]. Additionally, recent reports on Si [214] and Bi 1−x Sb x [215] NW-based thermoelectric devices have revealed that the high ratio of NW cross-sectional area to device area plays a critical role.…”

Section: Science China Materialsmentioning

confidence: 99%

Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

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Section: Science China Materialsmentioning

confidence: 99%

Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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“…Most experimental studies focused on a mat of nanowires for measurement of thermoelectric properties due to the difficulties associated with isolating and positioning a single nanowire [55].…”

Section: S T Ztmentioning

confidence: 99%

Nanowires in Thermoelectric Devices

Davami¹,

Lee²,

Meyyappan³

2011

Transactions on Electrical and Electronic Materials

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The low efficiency of bulk thermoelectric materials has limited the widespread application of thermoelectric power generation. Theoretical and experimental investigations indicate that materials prepared in the form of nanowires show higher thermoelectric coefficients, thus promising to revolutionize the field. This article reviews the basics of thermoelectric power generation, conventional devices, the role of nanowires and the current status of the field.

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“…For thermoelectric application, aligned Si nanowire were fabricated using vapour-liquid-solid (VLS) process and infused with low thermal conductivity and conformal polymer parylene. A thermal conductivity of 4.9±2.2 Wm -1 K -1 was measured for the composite (Abramson et al 2004). Similarly, bismuth telluride nanowire-epoxy composite were fabricated which showed reduced thermal conductivity and thereby a reduction in performance penalty from 27% to ~5% (Kalapi et al 2009).…”

Section: Nanowire Compositesmentioning

confidence: 99%