Fabrication and Characteristics of Silicon Bridge Magnetic Sensor Based on Cantilever Beam

Abstract

A silicon bridge magnetic sensor based on cantilever beam is presented in this paper. Thesensor is composed of the Wheatstone bridge that made up of nano-polysilicon thin-film transistors(TFTs) and a ferromagnetic magnet adhered to the free end of cantilever beam. Through building thesimulation model, the finite element analysis of the sensor is carried out by using ANSYS software.The results show that this sensor can realize the measurement to the external magnetic field. Accordingto the simulation results, fabrication and packaging of the sensor chip are achieved by using the microelectromechanical system (MEMS) technology. Experiment result shows that when the supply voltageis 3.0 V, the sensitivity of the sensor is 94 mV/T.