Fabrication and characteristics of GaP-AlGaP tapered waveguide semiconductor raman amplifiers

Nonlinear Photonic Waveguides: A Versatile Platform for Terahertz Radiation Generation (a Review)

“…[ 46 ] As shown in Figure 2d, the generated THz radiation exhibited peak emission at the frequencies of 1.3, 1.05, 0.8, and 0.7 THz for ridge widths of 200, 300, 500, and 1000 µm, respectively. [ 46 ]…”

“…[ 45 ] Similar experiments were performed using a 200 µm thick, (110) GaP ridge waveguide that was fabricated on a 150 µm thick GaP slab (see inset of Figure 2d), excited using a wavelength fixed at 1064 nm and a wavelength tunable from 1058 to 1063 nm. [ 46 ] As shown in Figure 2d, the generated THz radiation exhibited peak emission at the frequencies of 1.3, 1.05, 0.8, and 0.7 THz for ridge widths of 200, 300, 500, and 1000 µm, respectively. [ 46 ]…”

Switching Characteristics of All-Optical Wavelength-Selective Switch Consisting of Waveguide-Type Raman Amplifiers and 3dB Couplers

“…Optical waves having arbitrary wavelengths among those of incident WDM waves are dropped selectively and simultaneously to port 2 when pump waves having related wavelengths to those of dropped waves are injected into each waveguide-type Raman amplifier, as shown in Fig.1b. The switch is expected to operate on a few tens of picosecond order because waveguide-type Raman amplifiers that are constituents of the switch have the same capability 2,3) . Figure 2 shows the two dimensional model of the switch for switching characteristics measurement using beam propagation method (BPM).…”