2020
DOI: 10.1016/j.ceramint.2019.10.234
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Fabrication and characterisation of AlN-SiC porous composite ceramics by nitridation of Al4SiC4

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Cited by 17 publications
(4 citation statements)
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“…In SiC‐based refractories, the bonding phases were filled between the SiC particles and connected the SiC particles, the stability of bonding phases greatly affected working life. However, the common bonding phases, including SiO 2 , clay, Si 3 N 4 , β‐SiC, Si 2 N 2 O, β‐Sialon, AlN polytype, and Ti 3 SiC 2 , in SiC‐based products could be corroded by hot water vapor 20–36 …”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In SiC‐based refractories, the bonding phases were filled between the SiC particles and connected the SiC particles, the stability of bonding phases greatly affected working life. However, the common bonding phases, including SiO 2 , clay, Si 3 N 4 , β‐SiC, Si 2 N 2 O, β‐Sialon, AlN polytype, and Ti 3 SiC 2 , in SiC‐based products could be corroded by hot water vapor 20–36 …”
Section: Introductionmentioning
confidence: 99%
“…However, the common bonding phases, including SiO 2 , clay, Si 3 N 4 , β-SiC, Si 2 N 2 O, β-Sialon, AlN polytype, and Ti 3 SiC 2 , in SiC-based products could be corroded by hot water vapor. [20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] Yb 2 Si 2 O 7 not only had good chemical stability but also performed close coefficient of thermal expansion (CTE) with SiC substrate, 37,38…”
Section: Introductionmentioning
confidence: 99%
“…For simplicity and efficiency, heat-treating singlephase ternary carbide is a promising and attractive method for composites because only one single raw material is required, with the homogeneous chemical composition. 5,[18][19][20][21] Al 4 O 4 C is a promising compound for high-temperature applications and refractory because of their high melting point (1890 • C), low density (2.684 g/cm 3 ), and excellent oxidation resistance. [21][22][23][24][25][26][27] The study on high-temperature behavior of pressed Al 4 O 4 C pellets under a nitrogen atmosphere indicated that a nitride layer generated on the surface and thereby slowed the nitrogen diffusion into the substrate.…”
Section: Introductionmentioning
confidence: 99%
“…For simplicity and efficiency, heat‐treating single‐phase ternary carbide is a promising and attractive method for composites because only one single raw material is required, with the homogeneous chemical composition 5,18–21 . Al 4 O 4 C is a promising compound for high‐temperature applications and refractory because of their high melting point (1890°C), low density (2.684 g/cm 3 ), and excellent oxidation resistance 21–27 .…”
Section: Introductionmentioning
confidence: 99%