F.M.-noise and bias-current fluctuations of a silicon Pd-n-p+ microwave oscillator

Helmcke, J.; Herbst, Heinrich; Claassen, Manfred; Harth, W.

doi:10.1049/el:19720116

Cited by 9 publications

(2 citation statements)

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“…Thus, the predicted RF power is approximately two orders of magnitude higher than can actually be achieved [2][3][4]. Therefore, the approximate analysis cannot be employed to determine the capabilities of this device realistically.…”

Section: Results Of the Approximate Large-signal Analysismentioning

confidence: 99%

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Power limitations in BARITT devices

Kwok

Haddad

1976

Solid-State Electronics

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The results of a large-signal numerical simulation of the BARITT device using a single-carrier model are given to illustrate the basic transport mechanisms involved in the device. The results of existing first-order small-and large-signal analyses are compared with those computed numerically. Space-charge-limited thermionic injection, spatial velocity modulation, carrier diffusion, premature carrier collection, large-signal electric field depression and the low-field drift region are found to account for the large reduction of power and efficiency of the BARITT device. The maximum power and efficiency of Si uniformly doped and Read structures are found to be approximately 300 W/cm 2 and 3%, respectively. The effects of doping profile and material parameters are found to involve a trade off of large-signal handling capability and frequency of operation on one hand vs the negative conductance and thus the Q factor of BARITT devices on the other hand. The excessively high electron mobility in GaAs is found to be detrimental to device operation.

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Section: Results Of the Approximate Large-signal Analysismentioning

confidence: 99%

“…That theory predicted that Si BARITT devices should be capable of generating a power output of 24,000W/cm 2 with a maximum efficiency of 21% at 10GHz [1]. The experimentally reported values are, respectively, two orders and one order of magnitude smaller [2][3][4]. The computer simulation employed here is based on a single carrier model.…”

Section: Introductionmentioning

confidence: 99%