Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors

A physics-based model of AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed for the analysis of DC and microwave characteristics. Large-and small-signal parameters are calculated for a given device dimensions and operating conditions. Spontaneous and piezoelectric polarizations at the heterointerface and finite effective width of the 2DEG gas have been incorporated in the analysis. The model predicts a maximum drain current of 523 mA/mm and transconductance of 138 mS/mm for a 1 mm 3 75 lm device, which are in agreement with the experimental data.

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“…1b), W is the gate width, V c (x) is the channel potential, and l(x) is the field-dependent mobility given in [12] as,…”

Section: B Current-voltage Characteristicsmentioning

confidence: 99%

A physics-based model of DC and microwave characteristics of GaN/AlGaN HEMTs

Sippel

Islam

Mukherjee

2007

Int J RF and Microwave Comp Aid Eng

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Piezoelectric polarization dependent model of AlGaN/GaN high electron mobility transistors for improved microwave performance

Rashmi

Kranti²,

Gupta³

et al.

APMC 2001. 2001 Asia-Pacific Microwave Conference (Cat. No.01TH8577)

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Comprehensive analysis of small-signal parameters of fully strained and partially relaxed high Al-content lattice mismatched Al/sub m/Ga/sub 1-m/N/GaN HEMTs

Rashmi

Kranti

Haldar

et al. 2003

IEEE Trans. Microwave Theory Techn.

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This paper proposes an accurate model to investigate the small-signal microwave parameters of fully strained (FS) and partially relaxed (PR) Al Ga 1 N/GaN high electron-mobility transistors (HEMTs). It is observed that elastic strain relaxation of the Al Ga 1 N layer imposes an upper limit on the maximum two-dimensional electron-gas sheet charge density and is, thus, extremely critical in determining the microwave performance of high Al-content Al Ga 1 N/GaN HEMTs. The model incorporates the effects of strain relaxation of the barrier layer, field-dependent mobility, parasitic source/drain resistance, and velocity saturation to evaluate drain current, transconductance, drain conductance, cutoff frequency, and transit time of FS and PR Al Ga 1 N/GaN HEMTs with different Al mole fractions. The proposed model predicts a high drain current of 5.94 A/mm for a PR 0.3-m Al 0 4 Ga 0 6 N/GaN HEMT, which is in close proximity with previously published simulated results. A peak transconductance of 154 mS/mm is also estimated for a 1-m gate-length device with aluminum concentration of 15% (FS), which is in close agreement with previously published measured data. A high cutoff frequency of 21.09 GHz was predicted for a 0.6-m device with an Al mole fraction of 0.5 (PR), thus showing the potential of AlGaN/GaN HEMTs for microwave applications.

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Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors

Cited by 3 publications

References 7 publications

A physics-based model of DC and microwave characteristics of GaN/AlGaN HEMTs

A physics-based model of DC and microwave characteristics of GaN/AlGaN HEMTs

Piezoelectric polarization dependent model of AlGaN/GaN high electron mobility transistors for improved microwave performance

Comprehensive analysis of small-signal parameters of fully strained and partially relaxed high Al-content lattice mismatched Al/sub m/Ga/sub 1-m/N/GaN HEMTs

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