Extrinsic and intrinsic contributions for dielectric behavior of La2NiMnO6 ceramic

The electrical modulus and other dielectric properties by the impedance spectroscopy of LaCrO3and LaCr0.90Ir0.10O3perovskites

“…The complex electric modulus, M* ¼ M 0 + jM 00 , is inversely proportional to permittivity of the material, M* ¼ 1/3*. The Complex modulus also provides an alternative approach (i) to analyze the electrical response of the materials and has been adopted by scientists to study relaxation phenomena in ceramics materials and ionic conductors, [17][18][19][20][21][22][23][24] (ii) helps to conrm the ambiguity arising from the grain or grain boundary effect at elevated temperatures which may not be distinguished from complex impedance plots. The complex electric modulus has been discussed with both permittivity and impedance to study and analyze the contribution of the grain boundary on the relaxation mechanism of the materials also it offers us opportunities to investigate long-range conductions and localized dielectric relaxation phenomenon in microscopic level.…”

“…The complex electric modulus has been discussed with both permittivity and impedance to study and analyze the contribution of the grain boundary on the relaxation mechanism of the materials also it offers us opportunities to investigate long-range conductions and localized dielectric relaxation phenomenon in microscopic level. [17][18][19][20][21][22][23][24] The complex electric modulus is the inverse of complex permittivity and is given as follows:…”

“…The large semicircular arcs at high frequency represent the bulk or grain response. [17][18][19][20][21][22][23][24]31 A deviation from the semicircular shape of modulus arc of both samples has been observed with increasing temperature in high frequency region, and the semicircular arc for LCO sample has only formed at À100 and À80 C, though the semicircular arc for the Ir doped LCO sample has only formed at the other frequencies except 60, 80 and 100 C.…”

“…The charge carrier in electric eld could contribute to the electric response through motions such as charge displacement, dipole reorientation, space charge formation etc. [17][18][19][20][21][22][23] The dielectric materials play an important role in the design of novel and high performances at electronic technologies. The dielectric, impedance, and modulus data oen allow separately extracting additional useful information about the analysed dielectric materials.…”

B-site ordering and strain-induced phase transition in double-perovskite La2NiMnO6 films

“…Double-perovskite multiferroic La 2 NiMnO 6 (LNMO) received much attention in recent decades due to its abundant magnetoresistance, magnetocapacitance 1–3 and dielectric properties 2,4,5 . In particular, the near room temperature magnetic properties have opened up a wealth of promising applications in ferromagnetic semiconductor for spintronics and magnetoelectronics 6–8 .…”