Extremely-Thin Channel FET Technology for Advanced Logic CMOS

(Invited) HfZrO-Based Ferroelectric Devices for Lower Power AI and Memory Applications

“…We have recently proposed and demonstrated a method using HfO2-based FeFETs and MFM capacitors with temporary memory and nonlinearity as this physical reservoir (Fig. 6) [14,15,[19][20][21][22]. The advantages of HfO2-based ferroelectric devices as a physical reservoir are as follows.…”