2017
DOI: 10.1021/acs.chemmater.7b00839
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Extremely Slow Spontaneous Electron Trapping in Photodoped n-Type CdSe Nanocrystals

Abstract: The trapping dynamics of conduction-band electrons in colloidal degenerately doped n-CdSe nanocrystals prepared by photochemical reduction (photodoping) were measured by direct optical methods. The nanocrystals show spontaneous electron trapping with distributed kinetics that extend to remarkably long timescales. Shifts in nanocrystal band-edge potentials caused by quantum confinement and surface ion stoichiometry were also measured by spectroelectrochemical techniques, and their relationship to the slow elect… Show more

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Cited by 32 publications
(79 citation statements)
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References 59 publications
(161 reference statements)
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“…21,28 We have also shown that even though midgap electron traps below the Fermi level are filled by photodoping, new midgap traps appear spontaneously on long time scales because of trap-state fluctuations. 21 Following these observations, the trend of increasing 〈 /01 〉 with CdS shell growth is attributed to (1) reduction of the number of midgap surface electron traps through physical passivation, and (2) shifting of the conduction-band edge to more positive redox potentials relative to the electron-trap-state distribution through relaxation of electron quantum confinement. 21 19,21 This slow trapping is manifested as an extremely slow recovery of excitonic absorption after photodoping.…”
Section: Results and Analysismentioning
confidence: 87%
“…21,28 We have also shown that even though midgap electron traps below the Fermi level are filled by photodoping, new midgap traps appear spontaneously on long time scales because of trap-state fluctuations. 21 Following these observations, the trend of increasing 〈 /01 〉 with CdS shell growth is attributed to (1) reduction of the number of midgap surface electron traps through physical passivation, and (2) shifting of the conduction-band edge to more positive redox potentials relative to the electron-trap-state distribution through relaxation of electron quantum confinement. 21 19,21 This slow trapping is manifested as an extremely slow recovery of excitonic absorption after photodoping.…”
Section: Results and Analysismentioning
confidence: 87%
“…When the reduction potential for the anion sublattice is reached (−1.0 V vs Ag PRE), a much larger current density is observed, which we attribute to the reduction of the disulfide bridges in the covellite crystal structure (number of injected electrons: 4.0 × 10 22 cm –3 , see Supporting Information Figure S4). For these hole carrier density calculations, we assume a one-to-one relationship between the number of injected electrons and the hole carrier density, since we do not observe side reactions like reducible defects, 33 as mentioned above. The reduction of the disulfide bridges corresponds to complete filling of their antibonding orbitals making the bonds unstable and causing a change in the overall crystal structure, as shown below.…”
Section: Resultsmentioning
confidence: 99%
“…This work shows the importance of NC surface stoichiometry in applications involving tuned NC redox potentials, band‐edge alignment, or electron‐transfer driving forces. Furthermore, Fermi levels and NC redox potentials were measured using this method . The average number of conduction‐band electrons (e CB − ) per NC was also assessed using the absorbance.…”
Section: Advantages In Usementioning
confidence: 99%
“…Furthermore, Fermi levels and NC redox potentials were measured using this method. [112] The average number of conduction-band electrons (e CB À ) per NC was also assessed using the absorbance. Authors reported extremely slow trapping of e CB À in free-standing photodoped colloidal ntype CdSe NCs.…”
Section: Advantages In Usementioning
confidence: 99%
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