Extremely low sputtering degradation of polytetrafluoroethylene by C<sub>60</sub> ion beam applied in XPS analysis

Sanada, N.; Yamamoto, A.; Oiwa, Retsu; Ohashi, Yusuke

doi:10.1002/sia.1680

Cited by 97 publications

(71 citation statements)

References 9 publications

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“…Ионные пучки фуллерена C 60 нашли применение во вторичной ион-ной масс-спектрометрии (ВИМС) [1-4] для распыления анализиру-емого вещества, послойного анализа методом рентгеновской фото-электронной спектроскопии (РФЭС) [5,6], показана также возмож-ность формирования из них сверхтвёрдых нанокомпозитных по-крытий [7][8][9]. Интервал энергий, где происходит смена роста плён-ки на распыление поверхности, индивидуален для материала ми-шени [10] и, кроме того, может быть связан с химическим составом остаточной атмосферы вакуумной камеры [11].…”

Section: Introductionunclassified

“…Если распыление кремния ионами C 60 исследовалось как экспериментальными [11,12], так и теорети-ческими [10,13] методами, то зависимость коэффициента распыле-ния SiO 2 от энергии не определена до сих пор. В работе [6] показана возможность распыления SiO 2 ионами C 60 энергией 5 кэВ со скоро-стью 2,4 нм/мин. Известно также, что при энергии 2,5 кэВ на по-верхности стекла, основным компонентом которого является SiO 2 , формируется углеродная плёнка [14].…”

Section: Introductionunclassified

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Physical Mechanisms of SiO$_{2}$ Target Sputtering with Accelerated Ions of C$_{60}$

Maleyev¹,

Zubarev²,

Пуха³

et al. 2016

Metallofiz. Noveishie Tekhnol.

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Section: Introductionunclassified

Physical Mechanisms of SiO$_{2}$ Target Sputtering with Accelerated Ions of C$_{60}$

Maleyev¹,

Zubarev²,

Пуха³

et al. 2016

Metallofiz. Noveishie Tekhnol.

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“…In particular, the low damage sputtering enables the molecular depth profiling of organic materials. For example, the analysis of polymers [13,14] and biological cells [15] and analysis using an organic photoluminescence device [16] have been reported. In this study, human hair surface structures were analyzed using the TOF-SIMS depth profiling technique with C 60 sputtering.…”

Section: Introductionmentioning

confidence: 99%

Structural Analysis of the Outermost Hair Surface Using TOF-SIMS with C<sub>60</sub> Depth Profiling Technique

Okamoto

Ishikawa

Aoyagi

et al. 2012

e-J. Surf. Sci. Nanotechnol.

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Components on the outermost hair surface were directly analyzed with time-of-flight secondary ion mass spectrometry (TOF-SIMS). The depth profiling of characteristic amino acid components in hair surfaces was performed using a Bi3++ analysis beam combined with a C60 ++ sputtering beam. The depth analysis of a protein bilayer model of zein and casein layers indicated that the damage caused by C60++ sputtering did not influence the TOF-SIMS analysis, therefore, the C60 sputtering is considered to be feasible at an analysis depth of 2 µm from the surface. The depth profiling analysis data for hair surfaces showed oscillating changes in the peak intensities of amino acid fragments, and this phenomenon is considered to reflect the multilayer structure of cuticle tissue. Focusing on the first layer of cuticle tissue, the depth profiling change of the cysteine/cystine-related fragment corresponding to the A-layer, exocuticle and endocuticle of cuticle tissue was consistent with the TEM result. Furthermore, a comparison of the depth profiling data from before and after the bleaching treatment revealed that the cysteine/cystine-related peak intensity was high at the outermost surface because the layer was cysteine-rich for bonding the lipid layer. As a result, the existence of a thin protein layer with specific amino acid components, known as the epicuticle, was suggested. The depth profiling analysis of protein using TOF-SIMS provides significant information for investigating the structure and functions of the surface of human hair.

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“…The use of C 60 + sputtering has enabled molecular depth profiling by both XPS [1] and TOF-SIMS [2]. Figure 1 shows the XPS C1s and O1s spectrum of Teflon after sputtering to various depths with 500 eV Ar + and 10 keV C 60 + .…”

mentioning

confidence: 99%

“…The use of C 60 + sputtering has enabled molecular depth profiling by both XPS [1] and TOF-SIMS [2]. …”

mentioning

confidence: 99%

Sputtering of Organic Materials with a C₆₀⁺ Ion Beam

et al. 2010

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Depth profiling is one of the most important analytical capabilities of surface analysis techniques such as X-ray Photoelectron Spectroscopy , (XPS) Auger Electron Spectroscopy (AES) and Timeof-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). This involves repeatedly cycling between an ion beam sputtering phase and an analysis phase. Each successive cycle provides an analysis at incremental depths into the solid material. By choosing the appropriate sputtering conditions (e.g. beam voltage, beam current, raster size and sputter time) a depth profile can be acquired over depths ranging from only a few nm's to a few μm's. The use of depth profiling for elemental analysis has been in widespread use for over 30 years. During this time, atomic ion beams have been used for nearly all depth profiling experiments. The use of atomic ion beams works well for sputtering inorganic materials. However, atomic ion beams do not work well for sputtering organic materials because they cause excessive sputter induced damage to the chemical structures, resulting in a highly reduced carbon-rich layer at the bottom of the sputter crater.In recent years, C 60 + ion beams have been used to sputter a wide variety of organic materials. Through the use of molecular dynamic simulations, a conceptual picture of cluster ion sputtering has emerged [1]. The mechanism of cluster ion sputtering is very different from atomic ion sputtering. When a C 60 + ion strikes the surface of an organic material, the carbon atoms break apart and create 60 different collision cascades simultaneously in the same localized area. This simultaneous motion of so many atoms around the impact site causes an explosion of material and leaves behind very little damage to the underlying organic structure.The ability to sputter organic materials without significant accumulated damage to organic molecular structures has been a major breakthrough. The use of C 60 + sputtering has enabled molecular depth profiling by both XPS [1] and TOF-SIMS [2]. Figure 1 shows the XPS C1s and O1s spectrum of Teflon after sputtering to various depths with 500 eV Ar + and 10 keV C 60 + . The chemical states of oxygen and carbon and the C/O stoichiometry are clearly degraded under Ar + sputtering while both the chemical states and stoichiometry are maintained under C 60 + bombardment. Figure 2 shows a comparison of quantitative XPS depth profiles of Nafion 117. This comparison shows that under low energy Ar + sputtering the Nafion composition becomes increasingly carbon rich due to the loss of O, F, and S. On the other hand, under C 60 + sputtering the chemical composition of Nafion remains intact. This ability to sputter organic materials while maintaining the chemical composition is unique to cluster ion sputtering.

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Extremely low sputtering degradation of polytetrafluoroethylene by C₆₀ ion beam applied in XPS analysis

Cited by 97 publications

References 9 publications

Physical Mechanisms of SiO$_{2}$ Target Sputtering with Accelerated Ions of C$_{60}$

Physical Mechanisms of SiO$_{2}$ Target Sputtering with Accelerated Ions of C$_{60}$

Structural Analysis of the Outermost Hair Surface Using TOF-SIMS with C<sub>60</sub> Depth Profiling Technique

Sputtering of Organic Materials with a C₆₀⁺ Ion Beam

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Extremely low sputtering degradation of polytetrafluoroethylene by C60 ion beam applied in XPS analysis

Cited by 97 publications

References 9 publications

Physical Mechanisms of SiO$_{2}$ Target Sputtering with Accelerated Ions of C$_{60}$

Physical Mechanisms of SiO$_{2}$ Target Sputtering with Accelerated Ions of C$_{60}$

Structural Analysis of the Outermost Hair Surface Using TOF-SIMS with C<sub>60</sub> Depth Profiling Technique

Sputtering of Organic Materials with a C60+ Ion Beam

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Product

Resources

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Extremely low sputtering degradation of polytetrafluoroethylene by C₆₀ ion beam applied in XPS analysis

Sputtering of Organic Materials with a C₆₀⁺ Ion Beam