Extremely low losses 14xx single mode laser diode leading to 550-mW output power module with 0-75°C case temperature and 10-W consumption

Burie, J.-R.; Garabédian, P.; Starck, C.; Pagnod-Rossiaux, P.; Bettiati, M.; Nascimento, M. Do; Reygrobellet, J.-N.; Bertreux, J.-C.; Laruelle, François

doi:10.1117/12.906405

Cited by 2 publications

(1 citation statement)

References 6 publications

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“…The components analyzed in this study are high power semiconductor laser diodes emitting in the 1400-1500 nm band in InP technology [4]. A schematic cross section of the (p/n) buried heterostrucure (p/nBH) of the laser diode is shown in fig.…”

Section: Experimental Methodologymentioning

confidence: 99%

Optical characterizations of “P-down” bonded InP pump lasers

Gérard¹,

Starck²,

Laruelle³

et al. 2021

Microelectronics Reliability

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We investigate the effects of the assembly process and its parameters on the optical polarization in InP pump lasers for telecommunications. Different measurements were performed for this study, such as degree of polarization of the laser emission below and above the threshold current, as well as the evaluation of the induced strain in the materials by measuring the degree of linear polarization of the photo-luminescence. We demonstrate that the soldering process parameters can affect the emission polarization both below and above the laser threshold current.

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Section: Experimental Methodologymentioning

confidence: 99%

Optical characterizations of “P-down” bonded InP pump lasers

Gérard¹,

Starck²,

Laruelle³

et al. 2021

Microelectronics Reliability

Self Cite

View full text Add to dashboard Cite

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Fabrication of high power 1.5 µm wavelength InGaAsP/InP BH lasers having dilute waveguide structure

Guo,

Li,

Xiong

et al. 2024

Opt. Express

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1.5 µm wavelength high power buried heterojunction (BH) semiconductor lasers having dilute waveguide structure have been fabricated. The optical field is dragged down toward the n side of the device by the dilute waveguide layer, lowering the optical confinement factor of the p doped material and active material, which helps to enlarge the laser output light power. Compared with thick InGaAsP cladding layer, the dilute waveguide material is easy to be grown and has higher thermal conductivity. The slope efficiency of the obtained dilute waveguide BH lasers is notably higher than that of the BH lasers having no dilute waveguide. Our studies show that the dilute waveguide structure is promising for the fabrication of high power BH lasers.

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Extremely low losses 14xx single mode laser diode leading to 550-mW output power module with 0-75°C case temperature and 10-W consumption

Cited by 2 publications

References 6 publications

Optical characterizations of “P-down” bonded InP pump lasers

Optical characterizations of “P-down” bonded InP pump lasers

Fabrication of high power 1.5 µm wavelength InGaAsP/InP BH lasers having dilute waveguide structure

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