Extremely low dark current and detection range extension of Ga<sub>2</sub>O<sub>3</sub> UV photodetector using Sn alloyed nanostructures

Mondal, Arnab; Yadav, Manoj K; Shringi, S.N.; Bag, Ankush

doi:10.1088/1361-6528/ab82d4

Cited by 42 publications

(14 citation statements)

References 46 publications

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“…[112] The growth of doped nanostructures have been studied with the incorporation of Ge and Sn into the NSs to either achieve n-type doping or tune the bandgap of gallium oxide. [197][198] Fabrication of nanostructure based DUV PDs has also been done by growing α/β biphase nanorods array. [111] The performance of the PDs was increased by using graphene-Ag nanowire hybrid conductive electrodes giving the device selfpowered characteristics (Figure 8f,g).…”

Section: Nanostructure-based Pdmentioning

confidence: 99%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

279

153

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With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill‐effects on humans. This requires detection systems with suitable spectral response to the “invisible to the naked eye” radiation leaks with utmost sensitivity and swiftness. State of the art deep‐UV photodetectors based on the wide bandgap material gallium oxide have achieved responsivities up to few hundred A W−1 while the minimum response time achieved is few hundred nanoseconds. However, due to the trade‐off between these two key parameters, the ultimate performance of the photodetectors remains inadequate. The focus here is to give a thorough review of the gallium oxide based photodetectors, their recent progress and future prospects. This review highlights the fundamental physics and the key parameters such as dark current, responsivity, and response time with their dependence on the material properties. Exploration of the reasons behind current scenario in the field of gallium oxide is comprehensively and critically analyzed. The key challenges which limit device performance and inhibit the realization of real‐world practical detectors are also described. The lacunae currently plaguing the field is also discussed with possible remedial solutions.

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Section: Nanostructure-based Pdmentioning

confidence: 99%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

279

153

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“…Furthermore, the combination of amorphous/crystalline heterojunction and strict interface treatment significantly reduce the non-radiative recombination of photogenerated carriers, greatly improving the photodetection efficiency. Compared with representatively self-powered Ga 2 O 3 photodetectors in critical parameters of PDCR, R, D * , and decay speed [7], [13], [14], [17], [22], [23], [24], [25], [26], [27], [28], [29], [30], [31], [32], [33], [34], [35], [36], [37], this NiO/Ga 2 O 3 detector exhibits superexcellent comprehensive performance (Figs. 5(a) and (b)).…”

Section: Resultsmentioning

confidence: 99%

Self-Powered p-NiO/n-Ga₂O₃ Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

Ding¹,

Hao²,

Yu³

et al. 2023

IEEE Electron Device Lett.

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Self-powered solar-blind photodetector (SBPD) promises potential applications that urgently need portability and low-power consumption. Herein, an ultrasensitive self-powered p-n heterojunction SBPD based on amorphous NiO and single crystal Ga 2 O 3 has been reliably achieved. The device exhibits a high phototo-dark-current ratio of 3 × 10 6 , ultrahigh responsivity (R) of 5 A/W, and specific detectivity of 1.6 × 10 14 Jones under 254 nm illumination at 0 V, with a solar-blind/visible rejection ratio (R 254 nm /R 460 nm ) of 2 × 10 4 . Notably, the open circuit voltage can reach 1.3 V and the response speed is significantly less than 1 ms. The comprehensive performance of the device exceeds most reported stateof-the-art Ga 2 O 3 self-powered SBPDs, which is mainly attributed to amorphous NiO/crystalline Ga 2 O 3 vertical junction structure with low-defect interface and strong built-in electric field. This work provides novel design strategies for the future development of high-performance self-powered photodetector.

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“…In previous reports, ,− most Ga 2 O 3 -based photodetectors were irradiated under UV light with a wavelength of 254 nm (4.88 eV). However, the optical band gap of Ga 2 O 3 is slightly larger than its forbidden band width (4.9 eV) because of the Bostein shift, so UV light with a wavelength of lower than 254 nm should be more suitable for testing the response characteristics of the Ga 2 O 3 -based device.…”

Section: Resultsmentioning

confidence: 99%

Ta-Doped Ga₂O₃ Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors

Chen

Wang

Liu

et al. 2022

Crystal Growth & Design

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Self-powered solar-blind Ga2O3-based photodetectors based on polycrystalline films rather than single-crystal films have been widely studied. In this work, Ta-doped Ga2O3 single-crystal films deposited on porous p-type GaN substrates by metal–organic chemical vapor deposition (MOCVD) were prepared as self-powered solar-blind photodetectors. As the porosity of the substrate increased, the crystal quality of the deposited film was optimized, probably resulting from the reduction of threading dislocations (TDs). The epitaxial relation between the β-Ga2O3 single-crystal film and the GaN substrate was β-Ga2O3 (2̅01) || GaN (0001) with β-Ga2O3 [010] || GaN <21̅1̅0>. Compared with the photodetector based on the β-Ga2O3 grown on as-grown p-GaN, the detector based on the β-Ga2O3 deposited on porous p-GaN presented fast rise/decay times (0.41 s/0.34 s) and high photoelectric responsivity (3.54 × 10–2 A/W) at 222 nm without bias because of the electron–hole pairs separated by the in-built electric field rapidly, indicating good solar-blind response ability.

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Extremely low dark current and detection range extension of Ga₂O₃ UV photodetector using Sn alloyed nanostructures

Cited by 42 publications

References 46 publications

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Self-Powered p-NiO/n-Ga₂O₃ Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

Ta-Doped Ga₂O₃ Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors

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Extremely low dark current and detection range extension of Ga2O3 UV photodetector using Sn alloyed nanostructures

Cited by 42 publications

References 46 publications

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Self-Powered p-NiO/n-Ga2O3 Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

Ta-Doped Ga2O3 Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors

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Product

Resources

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Extremely low dark current and detection range extension of Ga₂O₃ UV photodetector using Sn alloyed nanostructures

Self-Powered p-NiO/n-Ga₂O₃ Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

Ta-Doped Ga₂O₃ Epitaxial Films on Porous p-GaN Substrates: Structure and Self-Powered Solar-Blind Photodetectors