Extremely high selective Si1−xGex-film wet etchant generating highly dissolved oxygen via peracetic acid oxidant for lateral gate-all-around FETs with a logic node of less than 3-nm

Lee, Seung-Jae; Lee, Ji-Eun; Lee, Chang-Jin; Kim, Ji-Hoon; Kim, Ji-Hun; Kim, Min-Won; Choi, Ji-Ho; Jeong, Ui-Hyun; Park, Jea-Gun

doi:10.1016/j.cej.2023.146257

Chemical Engineering Journal

2023

DOI: 10.1016/j.cej.2023.146257

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Extremely high selective Si1−xGex-film wet etchant generating highly dissolved oxygen via peracetic acid oxidant for lateral gate-all-around FETs with a logic node of less than 3-nm

Seung-Jae Lee,

Ji-Eun Lee,

Chang-Jin Lee

et al.

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Extremely high selective Si1−xGex-film wet etchant generating highly dissolved oxygen via peracetic acid oxidant for lateral gate-all-around FETs with a logic node of less than 3-nm

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References 34 publications

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