GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

DOI: 10.1109/gaas.2001.964359

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Extremely high P1dB MMIC amplifiers for Ka-band applications

R. Grundbacher²,

et al.

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Cited by 5 publications

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“…RFin RFout higher output power can be delivered [5]. The PA design begins with the analysis of the transistor.…”

Section: Match For Powermentioning

confidence: 99%

15 GHz medium power amplifier design for Ku-band applications

¹

,

²

,

³

et al. 2011

2011 IEEE Regional Symposium on Micro and Nano Electronics

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This paper present the design of 2-stage 15 GHz power amplifier (PA) using 0.15 µm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply of 4.5 V and DC bias of -0.2 V. The PA delivers maximum linear output power of 22.21 dBm while achieving maximum power-added-efficiency (PAE) of 37.02 %. The PA has an input and output return loss at 20.76 dB and 25.19 dB respectively. Having a current consumption of 132 mA, this PA achieves a small signal gain of 22.34 dB. The proposed PA is designed within a die size of about 2.08 x 1.03 mm 2 on GaAs substrate. Index Terms -Cascade, GaAs p-HEMT, Ku-band, MMIC, power added efficiency, power amplifiers.

“…RFin RFout higher output power can be delivered [5]. The PA design begins with the analysis of the transistor.…”

Section: Match For Powermentioning

confidence: 99%

15 GHz medium power amplifier design for Ku-band applications

¹

,

²

,

³

et al. 2011

2011 IEEE Regional Symposium on Micro and Nano Electronics

View full text Add to dashboard Cite

This paper present the design of 2-stage 15 GHz power amplifier (PA) using 0.15 µm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply of 4.5 V and DC bias of -0.2 V. The PA delivers maximum linear output power of 22.21 dBm while achieving maximum power-added-efficiency (PAE) of 37.02 %. The PA has an input and output return loss at 20.76 dB and 25.19 dB respectively. Having a current consumption of 132 mA, this PA achieves a small signal gain of 22.34 dB. The proposed PA is designed within a die size of about 2.08 x 1.03 mm 2 on GaAs substrate. Index Terms -Cascade, GaAs p-HEMT, Ku-band, MMIC, power added efficiency, power amplifiers.

3-stage 15 GHz p-HEMT power amplifier design for MMIC applications

¹

,

²

,

³

et al. 2010

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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Highly linear and compact MMW phased array transmitters [MMIC power amplifiers]

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,

²

,

³

et al. 2003

25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003.

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No abstract

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