Extreme Ultraviolet Absorption by Lithium Fluoride

Milgram, Alvin A.; Givens, M. Parker

doi:10.1103/physrev.125.1506

Cited by 64 publications

(6 citation statements)

References 29 publications

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“…In these cases, the peaks around 114, 118, and 112, 116, 119 nm might correspond to excitonic transitions between the valence and the conduction band of the host lattice. The exitonic transitions imply a large value of the index of refraction of fluoride crystals in the VUV, in agreement with previous measurements [62][63][64][65][66][67][68][69][70].…”

supporting

confidence: 91%

VUV Laser Spectroscopy of Trivalent Rare-Earth Ions in Wide Band Gap Fluoride Crystals

2002

Ultraviolet Spectroscopy and Uv Lasers

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supporting

confidence: 91%

VUV Laser Spectroscopy of Trivalent Rare-Earth Ions in Wide Band Gap Fluoride Crystals

2002

Ultraviolet Spectroscopy and Uv Lasers

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“…The conduction band of bulk LiF consists of the 2s, 2p states of Li, and the 3d state of F. [30] According to Refs. [31] and [32], the first-empty band corresponds to a Li + ion 2s electron and to the conduction band bottom energy level of the LiF(001) surface. This can be simply understood in terms of the shift of the 2s energy level of the free Li atom from −5.4 eV to approximately 2.0 eV [22,23] via the Madelung potential and correlation and exchange effects.…”

Section: Theoretical Model and Formulationmentioning

confidence: 99%

Landau–Zener model for electron loss of low-energy negative fluorine ions to surface cations during grazing scattering on a LiF(001) surface

Wang¹,

Zhang²,

Zhou³

et al. 2016

Chinese Phys. B

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There is no available theoretical description of electron transfer from negative projectiles at a velocity below 0.1 a.u. during grazing scattering on insulating surfaces. In this low-velocity range, electron-capture and electron-loss processes coexist. For electron capture, the Demkov model has been successfully used to explain the velocity dependence of the negative-ion fraction formed from fast atoms during grazing scattering on insulating surfaces. For electron loss, we consider that an electron may be transferred from the formed ionic diabatic quasi-molecular state to the formed covalent diabatic quasi-molecular state by the crossing of the potential curves of negative projectiles approaching the surface cations, which can be described by the Landau-Zener two-energy-level crossing model. Combining these two models, we obtain good agreement between the experimental and calculated data for the F − -LiF(001) collision system, which is briefly discussed.

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“…Al, a relatively corrosion-resistant metal, is a widely used electrode material in many electronic devices. Nevertheless, the high work function of Al and its high reactivity to organic materials − make it unfavorable as a cathode material for most organic electronic devices. − For this reason, Al is normally used as a capping metal for lower-work-function metals such as Ba, Ca, or Mg. ,,− Alkali halide interlayers are used to compensate for the high work function of Al through different electronic mechanisms. , Among these interlayer materials, LiF has attracted great interest because the incorporation of an ultrathin film (<1 nm) of LiF drastically improves the performance of photovoltaic cells and OLEDs. ,,,,− Despite the wide band gap of LiF (∼13 eV), which makes it a superior insulating material, an ultrathin LiF film inserted between Al and an organic film enhances the electron injection/extraction.…”

Section: Introductionmentioning

confidence: 99%

“…12,13 Among these interlayer materials, LiF has attracted great interest because the incorporation of an ultrathin film (<1 nm) of LiF drastically improves the performance of photovoltaic cells and OLEDs. 4,5,7,8,14−16 Despite the wide band gap of LiF (∼13 eV), 17 which makes it a superior insulating material, an ultrathin LiF film inserted between Al and an organic film enhances the electron injection/extraction.…”

Section: Introductionmentioning

confidence: 99%

Deposition of LiF onto Films of Fullerene Derivatives Leads to Bulk Doping

Torabi

Liu

Gordiichuk

et al. 2016

ACS Appl. Mater. Interfaces

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One of the most commonly used cathode interlayers for increasing the efficiency of electron injection/extraction in organic electronic devices is an ultrathin layer of LiF. Our capacitance measurements and electrical conductivity analysis show that thin films of fullerene derivatives and their mixtures with polymers are unintentionally doped upon deposition of LiF. The level of doping depends on the chemical structure of the fullerene derivatives. The doping effect on polymer/fullerene mixtures is significant only for blends in which the fullerene content is greater than the polymer content by weight. Our finding has profound implications for the development and characterization of organic photovoltaic devices, including a negative impact of doping on the stability of the device and erroneous estimations of properties such as charge carrier mobility and the dielectric constant.

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Extreme Ultraviolet Absorption by Lithium Fluoride

Cited by 64 publications

References 29 publications

VUV Laser Spectroscopy of Trivalent Rare-Earth Ions in Wide Band Gap Fluoride Crystals

VUV Laser Spectroscopy of Trivalent Rare-Earth Ions in Wide Band Gap Fluoride Crystals

Landau–Zener model for electron loss of low-energy negative fluorine ions to surface cations during grazing scattering on a LiF(001) surface

Deposition of LiF onto Films of Fullerene Derivatives Leads to Bulk Doping

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