Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements

Abstract

. (2017) 'Extraction of the sub-band gap density of states of Nb doped ZnO thin lm transistors using C-V measurements. ', Microelectronic engineering., Further information on publisher's website: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. The sub-band gap density of states (DOS) of Nb doped ZnO thin film transistors were extracted using a multi-frequency capacitance-voltage (C-V) method. The results can be represented by a two-term exponential DOS, representing the tail and deep states. The parameters for the tail and deep states are N tail = 1.6 × 10 19 cm −3 , T tail = 540 K, N deep = 6.5 × 10 16 cm −3 and T deep = 4058 K respectively. Furthermore, the DOS from C-V provides a good fit with current-voltage characteristics, using the multiple trap and release model. Crown

High-Performance TiO2 Thin-Film Transistors: In-Depth Investigation of the Correlation between Interface Traps and Oxygen Vacancies

“…The value of dielectric capacitance ( C OX ) ∼1 μF/cm 2 was calculated from the accumulation region of the C – V curves. According to Figure S8a in the Supporting Information, C – V curves are stretched over the frequency range of 1 kHz to 1 MHz for chip C375 because of the trapping of charge carriers in the interface trap states. − On the other hand, for chip C500 in Figure S8b, however, the low interface trap density and small frequency dispersion of capacitance indicate a good interface. The interface trap state density D it was extracted from the measured equivalent parallel conductance G m as a function of the bias voltage and frequency.…”

Improved Performance and Bias Stability of Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Enabled by an Oxygen‐Compensated Capping Layer

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Oxide semiconductor thin-film transistors (TFTs) have undergone extensive investigation for their potential in next-generation display applications. [1][2][3][4][5] High-resolution displays require oxide semiconductor TFTs to exhibit both high field-effect mobility and excellent bias stress stability. [3,6] Recently, indium-tinzinc-oxide (ITZO) TFTs have drawn substantial interest due to their high field-effect mobility and process compatibility.

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