Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

Sun, Yabin; Fu, Jun; Wang, Yudong; Zhou, Wei; Zhang, Wei; Liu, Zhihong

doi:10.1088/1674-1056/25/4/048501

Cited by 5 publications

(3 citation statements)

References 14 publications

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“…The reliability modeling-related research on this basis has been insufficient, still focusing mainly on the physical level of the device, with constraints such as long R&D cycle time, slow modeling, and incompatibility with EDA softwares [9,10]. A reliability compact model based on semi-empirical and semi-physical approaches may lack accuracy when actually characterizing degradation in time and frequency domains due to some approximations or simplifications [11,12]. Therefore, in addition to the ongoing in-depth study of the physical nature of RF microwave transistor aging and the associated reliability of compact models, we believe that there is another approach worth exploring.…”

Section: Introductionmentioning

confidence: 99%

An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network

Cheng,

Lu,

Yan

et al. 2023

Micromachines

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In this paper, an aging small-signal model for degradation prediction of microwave heterojunction bipolar transistor (HBT) S-parameters based on prior knowledge neural networks (PKNNs) is explored. A dual-extreme learning machine (D-ELM) structure with an adaptive genetic algorithm (AGA) optimization process is used to simulate the fresh S-parameters of InP HBT devices and the degradation of S-parameters after accelerated aging, respectively. In addition to the reliability parametric inputs of the original aging problem, the S-parameter degradation trend obtained from the aging small-signal equivalent circuit is used as additional information to inject into the D-ELM structure. Good agreement was achieved between measured and predicted results of the degradation of S-parameters within a frequency range of 0.1 to 40 GHz.

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Section: Introductionmentioning

confidence: 99%

An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network

Cheng,

Lu,

Yan

et al. 2023

Micromachines

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show abstract

“…In recent years, heterojunction bipolar transistors (HBTs) array with parallel HBT cells layout has been used widely for microwave power applications [1][2][3][4] due to its high current handling capability. [5][6][7] However, the self-heating effect caused by the power dissipation of each HBT cell and the thermal coupling effect among the adjacent HBT cells result in an uneven temperature profile in the HBTs array. Because of the positive temperature coefficient of the emitter current, the central HBT cells with higher temperature will conduct more current and consequently generate more heat, which aggravates the thermal effects and leads to thermal breakdown or thermal runaway.…”

Section: Introductionmentioning

confidence: 99%

Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout*

Chen¹,

Jin²,

Zhang³

et al. 2019

Chinese Phys. B

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Based on the thermal network of the two-dimensional heterojunction bipolar transistors (HBTs) array, the thermal resistance matrix is presented, including the self-heating thermal resistance and thermal coupling resistance to describe the self-heating and thermal coupling effects, respectively. For HBT cells along the emitter length direction, the thermal coupling resistance is far smaller than the self-heating thermal resistance, and the peak junction temperature is mainly determined by the self-heating thermal resistance. However, the thermal coupling resistance is in the same order with the self-heating thermal resistance for HBT cells along the emitter width direction. Furthermore, the dependence of the thermal resistance matrix on cell spacing along the emitter length direction and cell spacing along the emitter width direction is also investigated, respectively. It is shown that the moderate increase of cell spacings along the emitter length direction and the emitter width direction could effectively lower the self-heating thermal resistance and thermal coupling resistance, and hence the peak junction temperature is decreased, which sheds light on adopting a two-dimensional non-uniform cell spacing layout to improve the uneven temperature distribution. By taking a 2 × 6 HBTs array for example, a two-dimensional non-uniform cell spacing layout is designed, which can effectively lower the peak junction temperature and reduce the non-uniformity of the dissipated power. For the HBTs array with optimized layout, the high power-handling capability and thermal dissipation capability are kept when the bias voltage increases.

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“…Owing to its special base structure, SiGe HBTs show a built-in multi-Mrad total dose hardness with no intentional hardening. [8][9][10] However, single-event effects (SEE) re-main a serious problem, with recent results demonstrating a low linear energy-transfer threshold and high saturated crosssections. [11][12][13][14] A reduction in the sensitive area enclosed by deep trench isolation is considered an effective method of improving the net upset cross section.…”

Section: Introductionmentioning

confidence: 99%

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

Sun¹,

Li²,

Zhang³

et al. 2017

Chinese Phys. B

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In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts: a link base region under a spacer oxide, an intrinsic transistor region under the emitter window, and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the smallsignal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node, which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model.

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Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

Cited by 5 publications

References 14 publications

An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network

An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S-Parameters Based on Prior Knowledge Neural Network

Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout*

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

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