Extraction of Schottky diode parameters from current-voltage data for a chemical-vapor-deposited diamond/silicon structure over a wide temperature range

Abstract

Characteristic parameters of Schottky diodes formed from a chemical-vapor-deposited diamond/n+-Si junction were obtained experimentally from the I-V characteristics in the temperature range of 119–400K. Diode parameters, such as the barrier height φB0 and the ideality factor n, calculated using thermionic emission theory were found to be strongly temperature dependent. The temperature dependence of the parameters is attributed to surface states, series resistance, and inhomogeneities in the material. Diode parameters obtained using Cheung’s technique showed good agreement with the experimental results and are in accordance with the results expected for this structure.

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

“…This value decreased to 0.06 eV at 20 K. From the experimental results, the value of increased and the value of decreased at low temperatures. This is likely because of barrier height inhomogeneity, which may be attributable to the variation in thickness and composition of the interfacial layer as well as nonuniformity of the interfacial charges [27,28].…”

Alternating‐current conductance and capacitance of a diamond diode in the presence of deep‐level impurities

“…The interface presents two parallel structures with distinct phases: microcrystals and grain boundaries [4][5][6]. As reported in previous studies [4,7], the AC temperature-dependent properties can be described by a simple model consisting of two parallel circuits, in which one circuit represents the microcrystal properties and the other the grain boundary properties, and comprises the resistances and capacitances corresponding to depletion regions and the bulk.…”

“…As reported in previous studies [4,7], the AC temperature-dependent properties can be described by a simple model consisting of two parallel circuits, in which one circuit represents the microcrystal properties and the other the grain boundary properties, and comprises the resistances and capacitances corresponding to depletion regions and the bulk. In the present study, a similar model was proposed for analysis of results for the 2 Experimental The experimental procedures have previously been reported in more detail [5,6,8]. Using microwave plasma-assisted chemical vapour deposition, diamond films of 4-6 μm in thickness were grown on an ntype silicon substrate with a bulk resistivity of approximately 0.1 Ω.…”

Opto-electronic characterizations of oriented nano-structure CdSe film/Si (001) heterostructure

“…This technique has the advantage that the maximum error in assessing the value of R s is 10%, that compared, for example, to an error of 40% for Norde's method [53,54]. Plotting dV/d ln(I) versus I yields a straight line whose slope gives the series resistance, R s ; also, the y-axis intercept gives the ideality factor, n according to Eq.…”