2013
DOI: 10.1016/j.ijplas.2012.08.001
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Extraction of plasticity parameters of GaN with high temperature, in situ micro-compression

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Cited by 76 publications
(45 citation statements)
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“…14); GaN, ∼8 GPa (ref. 31); CrAlN/Si 3 N 4 , ∼16 GPa (ref. 32) and Zn-based metallic glasses15, ∼2 GPa—and are in the same strength level of the defect-free Mo-alloy columns produced from etching NiAl–Mo eutectic compounds33 and about half of that of pure W whiskers34, still our HEA pillars exhibit much better ductility.…”
Section: Resultsmentioning
confidence: 99%
“…14); GaN, ∼8 GPa (ref. 31); CrAlN/Si 3 N 4 , ∼16 GPa (ref. 32) and Zn-based metallic glasses15, ∼2 GPa—and are in the same strength level of the defect-free Mo-alloy columns produced from etching NiAl–Mo eutectic compounds33 and about half of that of pure W whiskers34, still our HEA pillars exhibit much better ductility.…”
Section: Resultsmentioning
confidence: 99%
“…Selection of hard crystals tested by microcompression. ZrB 2 , [87] Mo 2 BC, [85] WC, [21] Fe 3 Al, [88] Co 3 (Al,W), [89] CMSX-4, [36] Si, [31] GaAs, [2] InSb, [90] Al 2 O 3 (unpublished), MgO, [25] (Fe,Ni) 2 Nb, [30] (Mg, Al) 2 Ca (courtesy of C. Zehnder), Nb 2 Co, [34] AlN, [91] GaN, [92] doped ZrO 2, [93] LiF, [94] Al 7 Cu 2 Fe, [95] FeZn 13 , [96] Cu 6 Sn 5 , [24] either conventional or high resolution, is easily performed after compression by the site-specific FIB milling and where necessary further thinning of a transparent membrane from the micropillar (see Figs. 3, 4, 6, and 10, for examples).…”
Section: Prospective Articlementioning
confidence: 99%
“…The plastic behavior of GaN films has been studied primarily through indentation tests [15][16][17], However, indentation tests are difficult to interpret because they produce a complex stress field below the indenter and induce slip on multiple slip sys tems [18]. Recently, Wheeler et al [19] performed compression tests on [0001] -oriented GaN micropil lars in situ in a scanning electron microscope at temperatures up to 479.3 °C. Those tests were oriented for single slip on the [1120] (1100) prismatic slip system.…”
Section: Introductionmentioning
confidence: 99%
“…That model relates the plastic deformation in the crystal to the movement and multiplication of dislocations and assumes a power law relating the resolved shear stress and the dislocation velocity. Wheeler et al [19] use a hyperbolic sine model to relate the shear flow stress and dislocation velocity for pyramidal slip in GaN, which is based on the model for steady-state creep first proposed by Garofalo [23]. Wheeler et al [19] use a hyperbolic sine model to relate the shear flow stress and dislocation velocity for pyramidal slip in GaN, which is based on the model for steady-state creep first proposed by Garofalo [23].…”
Section: Introductionmentioning
confidence: 99%