“…We have obtained very tight inductance parameter spreads on 200-mm wafers. We have found a good agreement between the results of 3-D inductance extractors based on FastHenry [16], [22], [23] or similar numeric methods [17], [18], [30] and the experimental data, but much poorer agreement at small linewidths for 2.5-D simulators, e.g., Sonnet [31]. The data obtained can be used for SFQ circuit design into our 4M, 8M, and 10M fabrication processes.…”