Extraction of Ga(III) by Di‐(2‐ethylhexyl)phosphoric acid (D2EHPA)‐Modified XAD‐4 Resins Prepared by Solvent‐Nonsolvent Modification

Abstract

is one of the most important elements that are widely used in electronic devices. The development of Ga recovery technology is an important issue for resource recycling. In this study, di-(2-ethylhexyl)phosphoric acid (D2EHPA)modified XAD-4 resin (DMR) is prepared by the solvent-nonsolvent method. The evolution of pore characteristics demonstrates that the solvent-nonsolvent treatment is advantageous for the immobilization of D2EHPA in XAD-4 resin. The adsorption isotherm of Ga(III) can be described by the Langmuir isotherm model. The Ga(III) adsorption kinetics follows the pseudo-second-order model. The immobilized D2EHPA shows good stability. The reusability study indicates that DMR can maintain the performance after three cycles of adsorption and stripping. The results for the treatment of a practical leaching solution from GaN/Al 2 O 3 wafer further demonstrate that DMR can be applied effectively for Ga(III) recovery.

The Extraction and Separation of Scarce Critical Metals: A Review of Gallium, Indium and Germanium Extraction and Separation from Solid Wastes

“…Gallium (Ga), indium (In), and germanium (Ge), as rare metals, are the key materials for contemporary high-tech new materials, and they play an important role in the development of high technology and future energy. Ga, In, and Ge have a wide range of applications in the computer, communication, aerospace, energy, medicine, and health industries (Figure 1a) [1][2][3]. According to USGS statistics, shown in Figure 1b-d, the global Ga, In, and Ge products are mainly manufactured in China, Russia, Korea, and Japan, and among these countries, China accounts for the majority of the production of these three metals.…”