Extraction of Electron and Hole Ionization Coefficients From Metamorphically Grown InGaSb Diodes

Mohammedy, Farseem Mannan; Deen, M. Jamal; Thompson, D.A.

doi:10.1109/ted.2008.2011930

Cited by 9 publications

(8 citation statements)

References 29 publications

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“…According to the calculation, for the present InGaSb PIN photodiodes the cutoff wavelength is 2271 nm which is close to the experimentally found cutoff wavelength 2270 + 5 nm [16]. So the developed model fits adequately well with the experimental results obtained for InGaSb PIN photodiodes.…”

Section: Responsivity Quantum Efficiency and Detectivitysupporting

confidence: 85%

“…The model is based on the calculation of the dislocation dependence of minority carrier lifetime and recombination velocity of the carriers at the dislocations. By fitting the model to the experimental data [9,10,16], we obtain the diffusion lengths of electrons and holes to be 70.34 and 6.44 mm, respectively. The surface recombination velocities at the interface and at the exposed mesa edges are observed to be 2.26 × 10 2 and 4.12 × 10 5 cm/s, respectively.…”

Section: Discussionmentioning

confidence: 99%

“…For further study, the effects on the spectral response owing to the variation of temperature, dislocations, photon energy, diffusion depth and carrier concentration can also be analysed. Assuming the dislocations to be uniformly distributed all over the sample, temperature and dislocation dependence of quantum efficiency, spectral response and the electron and hole ionisation coefficients for InGaSb PIN photodiodes [16] can also be satisfactorily modelled. These models can be utilised to combine the aforementioned parameters appropriately, and thus optimise the device performance.…”

Section: Discussionmentioning

confidence: 99%

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Analysis of electrical and optical characteristics of InGaSb PIN photodiodes

Tanzid¹,

Mohammedy²

2012

IET Optoelectronics

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This study represents an analysis of electrical and optical characteristics of InGaSb PIN photodiodes. The electrical characteristics are analysed by depicting a model of zero-bias resistance-area product (R 0 A) of such photodiodes. The effects of dislocation and temperature on R 0 A are also included in the model. Different optoelectronic properties of the material are extracted by fitting the obtained models with experimental data. The extracted dislocation density is 6.67 × 10 8 cm 22 , which is close to the measured value of 2.4(+0.2) × 10 8 cm 22 . Through the dislocation and temperature-dependent modelling, maximum R 0 A is found to be 1.85 V cm 2 at 139 K. Experimental data obtained at 300 and 363 K are fitted with theoretical model. The optical properties are analysed by the modelling of responsivity, quantum efficiency and detectivity. Cutoff wavelength is found to be 2271 nm, which is within +5 nm of the experimentally obtained data. The present analysis gives a photodiode responsivity is 0.47 A/W, quantum efficiency is 28.86% and detectivity is 1.53 × 10 9 cm Hz 1/2 /W 1 at a particular wavelength of l ¼ 2.0 mm, which are agreeable to the experimentally obtained data.

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Section: Responsivity Quantum Efficiency and Detectivitysupporting

confidence: 85%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Analysis of electrical and optical characteristics of InGaSb PIN photodiodes

Tanzid¹,

Mohammedy²

2012

IET Optoelectronics

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“…There has been already a substantial amount of work done to extract ionization coefficients from various alloys of III-V ternary alloys [3]. The semi-analytical expression of Okuto and Crowell [4] bear significant results.…”

Section: Introductionmentioning

confidence: 99%

Numerical fitting of Ionization coefficients for APDs based on ternary materials

Rabbani

Majumder

Mohammedy

2012

2012 Photonics Global Conference (PGC)

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The efficiency of the avalanche process in Avalanche photodiodes depends on the Ionization coefficients. Ionization coefficients are dependent on the band-structure of materials. Ionization coefficients at different temperatures and fields are predicted by an analytical formula proposed by Okuto and Crowell. In this work, we propose two different mean free paths in two different field regions. These mean free paths, taken as the fitting parameters, have been optimized at different temperatures for InxGa1−xSb (x=0.06, 0.10, 0.12, 0.18), AlxGa1−xSb (x=0.05, 0.10) and InxGa1−xAs (x=0.02) using Particle Swarm Optimization algorithm. The present values have been compared with previous values extracted from the formula proposed and significant improvements have been achieved.

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“…For further study, the effects on the spectral response due to the variation of temperature, dislocations, photon energy, diffusion depth, and carrier concentration can also be analyzed [6]. The electron and hole ionization coefficients for InGaSb PIN photodiodes [8] can also be modeled in a similar fashion. These models can be utilized to combine the aforementioned parameters appropriately and thus optimize the device performance.…”

mentioning

confidence: 99%

Analysis of optical properties of InGaSb PIN photdiodes

Tanzid¹,

Mohammedy²

2011

Photon. Lett. Poland

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Abstract-This paper represents the optical characteristics of InGaSb PIN photodiodes, grown on metamorphic layers of InGaSb, through the modeling of responsivity, quantum efficiency and detectivity. The modeling is based on the wavelength dependent models of absorption coefficient and reflectivity. Theoretical results are fitted with experimental data obtained for these photodiodes. The cut-off wavelength is found to be 2271nm, which is within ±5nm of the experimentally obtained data. The detectivity of the photodiodes is found to be 1.5(±0.1)×10 9 cmHz 1/2 W -1 and quantum efficiency 28±3% through the analysis. Such modeling can be used to optimize the detection performance of InGaSb PIN photodiodes.

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Extraction of Electron and Hole Ionization Coefficients From Metamorphically Grown InGaSb Diodes

Cited by 9 publications

References 29 publications

Analysis of electrical and optical characteristics of InGaSb PIN photodiodes

Analysis of electrical and optical characteristics of InGaSb PIN photodiodes

Numerical fitting of Ionization coefficients for APDs based on ternary materials

Analysis of optical properties of InGaSb PIN photdiodes

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