Extraction of built-in potential of organic diodes from current-voltage characteristics

Abstract

Physics based analytic equations for charge carrier profile and current density are derived by solving the carrier transport and the continuity equations for metal-intrinsic semiconductor-metal diodes. Using the analytic models a physics based method is developed to extract the built-in potential V bi from current density-voltage (J-V ) characteristics. The proposed method is thoroughly validated using numerical simulation results. After verifying the applicability of the proposed theory on experimentally fabricated organic diodes, V bi is extracted using the present method showing a good agreement with the reported value.