Extracting the near surface stoichiometry of BiFe0.5Mn0.5O3 thin films; a finite element maximum entropy approach

Song, Fei; Monsen, Å. F.; Li, Z. S.; Choi, Eun Mi; MacManus‐Driscoll, Judith L.; Xiong, Jie; Jia, Q. X.; Wahlström, Erik; Wells, Justin W.

doi:10.1016/j.susc.2012.06.016

Cited by 4 publications

(9 citation statements)

References 40 publications

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“…was lower than the superconducting quantum interference device (SQUID) measurement (90 emu/cc, 0.58 μ B /f.u. ), likely because the XMCD penetration depth is only 5 – 10 nm, and so the signal is influenced by surface degradation effects and non‐magnetic Bi 1‐δ (Mn 1‐x Fe x ) 2 O 4 outgrowths …”

Section: Resultsmentioning

confidence: 99%

Room Temperature Ferrimagnetism and Ferroelectricity in Strained, Thin Films of BiFe_0.5Mn_0.5O₃

Choi

Fix

Kuršumović

et al. 2014

Adv Funct Materials

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Highly strained films of BiFe0.5Mn0.5O3 (BFMO) grown at very low rates by pulsed laser deposition were demonstrated to exhibit both ferrimagnetism and ferroelectricity at room temperature and above. Magnetisation measurements demonstrated ferrimagnetism (TC ∼ 600K), with a room temperature saturation moment (MS) of up to 90 emu/cc (∼ 0.58 μB/f.u) on high quality (001) SrTiO3. X-ray magnetic circular dichroism showed that the ferrimagnetism arose from antiferromagnetically coupled Fe3+ and Mn3+. While scanning transmission electron microscope studies showed there was no long range ordering of Fe and Mn, the magnetic properties were found to be strongly dependent on the strain state in the films. The magnetism is explained to arise from one of three possible mechanisms with Bi polarization playing a key role. A signature of room temperature ferroelectricity in the films was measured by piezoresponse force microscopy and was confirmed using angular dark field scanning transmission electron microscopy. The demonstration of strain induced, high temperature multiferroism is a promising development for future spintronic and memory applications at room temperature and above.

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Section: Resultsmentioning

confidence: 99%

Room Temperature Ferrimagnetism and Ferroelectricity in Strained, Thin Films of BiFe_0.5Mn_0.5O₃

Choi

Fix

Kuršumović

et al. 2014

Adv Funct Materials

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“…Other than C 1s, the only species observed are La, Sr, Mn, O and Si. As reported previously, the origin of silicon contamination remains unclear, microscopic fragments of SiO 2 from ultrasound treatment in standard laboratory glassware are a possibility. Silicon is especially hard to identify in XPS studies of LSMO films because the Si 2p core level is coincidental with La 4d 3/2 and is much weaker.…”

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confidence: 84%

“…As thin films, such properties may be modified, or changed entirely, because of surface and/or interface characteristics that can be quite different from bulk‐like properties. Photoemission spectroscopy (PES) has proven to be a very useful technique in probing the chemical, physical and electronic properties of the surface and near‐surface regions, but the same short electron escape depth responsible for the exceptional surface sensitivity hinders the study of buried interfaces . For example, for thin LSMO films atop SrTiO 3 (STO), a strontium‐enriched and manganese‐depleted surface layer has been reported, but the implications of this on the stoichiometry of the lower interface are not clear – assuming the total strontium quantity to be correct, the interface may be correspondingly strontium depleted (such that the average quantity throughout the film is correct), or it may also be strontium enriched, presupposing the central part of the film to be depleted.…”

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confidence: 99%

“…Core‐level photoemission allows the stoichiometry of the sample within the shallow region probed to be studied quantitatively. Changing the emission angle changes the probing depth by a factor of cos θ , thus, in principle, allowing the depth‐dependent stoichiometry to be extracted – however, this requires a finite element approach …”

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confidence: 99%

“…To extract the layer‐by‐layer composition, a finite element model is constructed as described previously . Each layer contains a quantity Q of each of the measured elements (La, Sr and Mn), initially set to the normalized bulk ratio La : Sr : Mn = 0.35 : 0.15 : 0.5.…”

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confidence: 99%

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The layer‐by‐layer stoichiometry of La_0.7Sr_0.3MnO₃/SrTiO₃ thin films and interfaces

Song

Monsen

et al. 2013

Surface & Interface Analysis

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By using a combination of synchrotron photoemission and a finite element model, the layer-by-layer stoichiometry of pulsed laser deposited La 0.7 Sr 0.3 MnO 3 (LSMO) thin films is extracted. For 3-and 5-unit-cell films, the LSMO stoichiometry at the LSMO/ SrTiO 3 interface has been studied, and it is found that the Sr surface segregation is reversed at the lower interface such that it becomes La rich and Sr depleted. Mn is depleted throughout the entire layer, consistent with reports of a magnetically 'dead' layer and the formation of a Ruddlesden-Popper phase. The depth-averaged Mn concentration is less than 50% of the expected value, suggesting that interface mixing or segregation into the bulk is important, whereas the depth-averaged La and Sr concentrations are close to the expected values.

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Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform

Røst

Tosi

Strand

et al. 2023

ACS Appl. Mater. Interfaces

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High-density structures of subsurface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform; however, a much-needed confirmation of their dopant arrangement has been lacking. In this work, we take advantage of the chemical specificity of X-ray photoelectron diffraction to obtain the precise structural configuration of P dopants in subsurface Si:P δ-layers. The growth of δ-layer systems with different levels of doping is carefully studied and verified using X-ray photoelectron spectroscopy and low-energy electron diffraction. Subsequent diffraction measurements reveal that in all cases, the subsurface dopants primarily substitute with Si atoms from the host material. Furthermore, no signs of carrier-inhibiting P−P dimerization can be observed. Our observations not only settle a nearly decade-long debate about the dopant arrangement but also demonstrate how X-ray photoelectron diffraction is surprisingly well suited for studying subsurface dopant structure. This work thus provides valuable input for an updated understanding of the behavior of Si:P δ-layers and the modeling of their derived quantum devices.

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Extracting the near surface stoichiometry of BiFe0.5Mn0.5O3 thin films; a finite element maximum entropy approach

Cited by 4 publications

References 40 publications

Room Temperature Ferrimagnetism and Ferroelectricity in Strained, Thin Films of BiFe_0.5Mn_0.5O₃

Room Temperature Ferrimagnetism and Ferroelectricity in Strained, Thin Films of BiFe_0.5Mn_0.5O₃

The layer‐by‐layer stoichiometry of La_0.7Sr_0.3MnO₃/SrTiO₃ thin films and interfaces

Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform

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Extracting the near surface stoichiometry of BiFe0.5Mn0.5O3 thin films; a finite element maximum entropy approach

Cited by 4 publications

References 40 publications

Room Temperature Ferrimagnetism and Ferroelectricity in Strained, Thin Films of BiFe0.5Mn0.5O3

Room Temperature Ferrimagnetism and Ferroelectricity in Strained, Thin Films of BiFe0.5Mn0.5O3

The layer‐by‐layer stoichiometry of La0.7Sr0.3MnO3/SrTiO3 thin films and interfaces

Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform

Contact Info

Product

Resources

About

Room Temperature Ferrimagnetism and Ferroelectricity in Strained, Thin Films of BiFe_0.5Mn_0.5O₃

Room Temperature Ferrimagnetism and Ferroelectricity in Strained, Thin Films of BiFe_0.5Mn_0.5O₃

The layer‐by‐layer stoichiometry of La_0.7Sr_0.3MnO₃/SrTiO₃ thin films and interfaces