Extracting solid conductors from a single triangulated surface representation for interconnect analysis

Sefler, J. F.; Neureuther, A. R.

doi:10.1109/66.484286

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…With the advent of workstations, X-windows and C++ simulation went 3D. The three-dimensional effort was based on using connected triangles to represent the surfaces while they evolved in time [41][42][43][44][45][46][47][48][49]. Kenny Toh wrote the resist bleaching, development, and plotting codes.…”

Section: Role Of Hardware Infrastructure and Algorithmsmentioning

confidence: 99%

If it moves, simulate it!

Neureuther

2008

Optical Microlithography XXI

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In the last 35 years modeling of projection printing has undergone many paradigm shifts in physical models, computational engines, algorithms and opportunities. The trigger event for the first quantitative positive resist Dill model was the development and application of automated thin-film measurement equipment. The use of partial coherence which helps imaging also complicates the understanding and necessitates the use of simulation to guide lithography practice. Simulation has also played an important role in discovery (intensity imbalance in phase-shifting masks), invention (self-interferometric mask monitors) and creation of analysis techniques (first-cut accurate fast-CAD). The current challenges and growth areas for simulation include calibration, synergy with metrology, electronic self-testing and linking circuit design and fabrication.

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Section: Role Of Hardware Infrastructure and Algorithmsmentioning

confidence: 99%

If it moves, simulate it!

Neureuther

2008

Optical Microlithography XXI

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“…Varieties of approaches to 3-D simulations of etching, deposition and DRIE processes have been presented [1]- [6]. The major simulation models can be summarized as: 1) the string model, 2) the ray-tracing model, 3) the cell-removal model, 4) the volume-removal model, 5) the modified diffusion model (MDM) and 6) the virtual process model.…”

Section: Introductionmentioning

confidence: 99%

An Improved 3D Simulator for MEMS Processes

Tan

Wang

et al. 2006

2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems

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A new improved comprehensive 3D surface simulator is presented for different MEMS processes. The simulator consists of three parts: the common surface evolution models, 3D represent layer, and physical processes model interface. The surface evolution models including faster surface string model and material cell-removal model, function as a common 3D surface and structure generator, segment control and loops are detectible and solved by the improved evolution algorithm. A WTK virtual environment is used as the 3D display interface for representing the 3D-results generated in surface evolution. Different physical models, experiment parameters, materials and so on, will be described in the data layer. Using this simulator, the isotropic etching, anisotropic etching, deposition and DRIE processes are simulated. WTK Represent Layer String Surface Material Cell-Element Model Model Physical Data Layer Figure 1. The simulator framework includes three layers: 1) World-Tool-kit based represention layer, 2) String Surface Model and Mater Cell-Element Model, 3) Physical Data Layers. 2) is a common surface Evoluttion model, acting as a central part of simulator.

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