Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature: the self-absorption effect

Ye, Honggang; Su, Zhicheng; Tang, Fei; Zheng, Changcheng; Chen, Guangde; Wang, Jian; Xu, Shengqiang

doi:10.1016/j.scib.2017.10.015

Cited by 12 publications

(6 citation statements)

References 32 publications

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“…However, in the 200 W Ar plasma-treated sample, when the energy exceeds the threshold~25 μJ, sharp peaks emerge from the low-energy shoulder of the broad spontaneous emission. The lasing emission at 390 nm can be ascribed to the P-band emission of ZnO [29] or significant self-absorption effect [30]. The integrated PL intensity of these stimulated peaks with respect to pump density is shown in the inset of Fig.…”

Section: Resultsmentioning

confidence: 96%

Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment

Tang

Lin

et al. 2019

Nanoscale Res Lett

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ZnO nanowires play a very important role in optoelectronic devices due to the wide bandgap and high exciton binding energy. However, for one-dimensional nanowire, due to the large surface to volume ratio, surface traps and surface adsorbed species acts as an alternate pathway for the de-excitation of carriers. Ar plasma treatment is a useful method to enhance the optical property of ZnO nanowires. It is necessary to study the optical properties of ZnO nanowires treated by plasma with different energies. Here, we used laser spectroscopy to investigate the plasma treatments with various energies on ZnO nanowires. Significantly improved emission has been observed for low and moderate Ar plasma treatments, which can be ascribed to the surface cleaning effects and increased neutral donor-bound excitons. It is worth mentioning that about 60-folds enhancements of the emission at room temperature can be achieved under 200 W Ar plasma treatment. When the plasma energy exceeds the threshold, high-ion beam energy will cause irreparable damage to the ZnO nanowires. Thanks to the enhanced optical performance, random lasing is observed under optical pumping at room temperature. And the stability has been improved dramatically. By using this simple method, the optical property and stability of ZnO nanowires can be effectively enhanced. These results will play an important role in the development of low dimensional ZnO-based optoelectronic devices.

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Section: Resultsmentioning

confidence: 96%

Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment

Tang

Lin

et al. 2019

Nanoscale Res Lett

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“…It can be observed that the FX-2LO transition energy under 2P excitation are generally 1-2 meV smaller than that under 1P excitation. Such a redshift is attributed to the profound re-absorption effect upon 2P excitation [14].…”

Section: Resultsmentioning

confidence: 99%

“…The excitation laser was focused at the surface of the sample under 1P excitation while it can penetrate into the sample under 2P excitation and lead to an enhanced PL signal. (D 0 X), and the two-electron-satellite related emissions (TES, TES-1LO) of D 0 X excitons, which are assigned based on the work done by Ye et al [14]. The D 0 X induced peak located at around 370 nm may be identified as the residual of the D 0 X emission peak owing to the strong re-absorption effect occurring in the near bandgap region.…”

Section: Methodsmentioning

confidence: 96%

Recombination dynamics and pronounced re-absorption effect in ZnO single crystals under two-photon excitation

Lu,

Zhao,

Zheng

et al. 2023

J. Phys. D: Appl. Phys.

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Time-resolved photoluminescence measurements were conducted on ZnO single crystals using two-photon (2P) excitation at low temperatures ranging from 25 to 260 K. The decay constants of various emission peaks are determined and compared between one-photon and two-photon excitations using a recently modified localized-state ensemble model. The analysis is focused on the redshift of the phonon-assisted free exciton transition energy with increasing temperature. A significantly longer radiative recombination lifetime of approximately 840 ps is observed under 2P excitation. The extended lifetime of excitons during 2P excitation is achieved through the interplay of multiple mechanisms. Photon-recycling, enabled by high absorption coefficients and total internal reflection, facilitates re-absorption and new carrier generation. Phonon scattering lowers photon energy, allowing their escape from the crystal, while exciton–polariton interactions delay photon travel, collectively contributing to the extension of exciton lifetimes. The re-absorption effect and elongated carrier lifetime observed from our work could be beneficial for applications of ZnO materials in 2P imaging, particularly of biological samples.

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“…Hence, the green emission cannot be from the donor–acceptor pair recombination. Furthermore, the continuous blue shift with increasing temperature is a unique abnormal phenomenon in perovskite semiconductors, whereas a red shift is commonly observed in general semiconductors. − This phenomenon has been widely observed, and the intrinsic reason was attributed to the antibonding feature of the valence band. − However, the situation in tetragonal CsPb 2 Br 5 is still not clear. So, DFT-based calculations were performed to simulate the lattice dependence of the band gap.…”

Section: Resultsmentioning

confidence: 99%

Extrinsic Photoluminescence and Resonant Raman Spectra of CsPb₂Br₅ Microspheres

Shen

Pan

et al. 2021

J. Phys. Chem. C

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Tetragonal CsPb2Br5 has attracted tremendous attention due to its high stability and strong green emission. But its luminescence mechanism has become controversial after it was found to have an indirect band gap of 3.35 eV. Here, the phase structure of a sample is confirmed by its X-ray diffraction pattern and absorption spectrum. The mechanism of the green emission is investigated by its temperature evolution features and the resonant Raman signals. The emission wavelength and its large-scale blue shift with increasing temperature from 10 to 300 K agree well with that of perovskite CsPbBr3, while the theoretical calculation indicates a negligible shift for the optical emission in CsPb2Br5. The photoluminescence intensity, peak width, and temporal decay curves also exhibit a temperature dependence similar to that of CsPbBr3. Additionally, the phonon modes derived from the resonant Raman spectrum of the sample are the same as those found in CsPbBr3 nanocubes. The one at 30 cm–1 is thought to be a specific sign for the existence of CsPbBr3. Therefore, the green emission observed in CsPb2Br5 is proposed to be from the traces of perovskite CsPbBr3.

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Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature: the self-absorption effect

Cited by 12 publications

References 32 publications

Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment

Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment

Recombination dynamics and pronounced re-absorption effect in ZnO single crystals under two-photon excitation

Extrinsic Photoluminescence and Resonant Raman Spectra of CsPb₂Br₅ Microspheres

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Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature: the self-absorption effect

Cited by 12 publications

References 32 publications

Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment

Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment

Recombination dynamics and pronounced re-absorption effect in ZnO single crystals under two-photon excitation

Extrinsic Photoluminescence and Resonant Raman Spectra of CsPb2Br5 Microspheres

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Extrinsic Photoluminescence and Resonant Raman Spectra of CsPb₂Br₅ Microspheres