2022
DOI: 10.1088/1361-6528/ac6bb2
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External bias dependent dynamic terahertz propagation through BiFeO3 film

Abstract: Interactions of Terahertz radiations with matter can lead to the realization of functional devices related to sensing, high-speed communications, non-destructive testing (NDT), spectroscopy, etc. In spite of the versatile applications that THz can offer, progress in this field is still suffering due to the dearth of suitable responsive materials. In this context, we have experimentally investigated emerging multiferroic BiFeO3 film (~ 200 nm) employing Terahertz time-domain spectroscopy (THz-TDS) under vertica… Show more

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Cited by 18 publications
(8 citation statements)
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References 57 publications
(56 reference statements)
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“…S4 34 . To satisfy the need of highly resistive substrate in order to nullify the conductive losses in substrate 35 for THz-TDS measurements, the sapphire substrate has been chosen for growth of monolayer MoS 2 . The already optimized growth parameters have been used for growth on sapphire substrate as discussed in the experimental part.…”
Section: Resultsmentioning
confidence: 99%
“…S4 34 . To satisfy the need of highly resistive substrate in order to nullify the conductive losses in substrate 35 for THz-TDS measurements, the sapphire substrate has been chosen for growth of monolayer MoS 2 . The already optimized growth parameters have been used for growth on sapphire substrate as discussed in the experimental part.…”
Section: Resultsmentioning
confidence: 99%
“…Arrangement of four parabolic mirrors in the THz-TDS setup is designed in such a way that the emitting THz beam is focussed to pass through the SLG sample before detecting at the receiver end. 15,[43][44][45] A dry N 2 atmosphere was maintained throughout the experiment to minimize the environmental effect such as humidity while recording the true THz responses as precisely as possible. 46 The study of SLG in the THz regime is motivated by an appropriate intraband energy gap of SLG when compared with single THz photon energy (4.1 meV for 1 THz).…”
Section: Resultsmentioning
confidence: 99%
“…A metasurface array of 1 cm × 1 cm is fabricated that maintains homogeneous excitation of the device. The obtained time-domain data is converted to frequency domain by deploying the Fast Fourier Transform (FFT) algorithm [60]. The observed transmission amplitude is normalized with respect to the silicon substrate, identical to the one used as substrate in metasurface fabrication.…”
Section: Design Optimizationmentioning
confidence: 99%