Triggered, indistinguishable, single photons play a central role in various quantum photonic implementations. Here, we realize a novel n + −i−n ++ diode structure embedding semiconductor quantum dots: the gated device enables spectral tuning of the transitions and deterministic control of the observed charged states. Blinking-free single-photon emission and high two-photon indistinguishability is observed. The linewidth's temporal evolution is investigated for timescales spanning more than 6 orders of magnitude, combining photon-correlation Fourier spectroscopy, high-resolution photoluminescence spectroscopy, and two-photon interference (visibility of V TPI,2 ns = (85.5 ± 2.2) % and V TPI,9 ns = (78.3 ± 3.0) %). No spectral diffusion or decoherence on timescales above ∼ 9 ns is observed for most of the dots, and the emitted photons' linewidth ((420 ± 30) MHz) deviates from the Fourier-transform limit only by a factor of 1.68 . Thus, for remote TPI experiments, visibilities above 74% are anticipated. The presence of n-doping only signifies higher available carrier mobility, making the presented device highly attractive for future development of high-speed tunable, high-performance quantum light sources.Quantum optical implementations and applications require sources of non-classical light capable of emitting single photons on-demand and with a high degree of indistinguishability [1].Furthermore, for upscaling the experimental complexity, remote sources capable of emitting light at the same wavelength are highly desirable [2][3][4][5][6]. Semiconductor quantum dots have shown