Extending the road beyond CMOS

Hutchby, J.A.; Bourianoff, George I.; Zhirnov, V.V.; Brewer, J.E.

doi:10.1109/101.994856

Cited by 146 publications

(67 citation statements)

References 40 publications

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“…Several nanotechnologies are rapidly evolving, but at this point it seems unlikely that any of them can completely replace CMOS [2]. However, co-design of CMOS and some suitable nanotechnology seems more plausible [3].…”

Section: Introductionmentioning

confidence: 99%

A CAD framework for co-design and analysis of CMOS-SET hybrid integrated circuits

Mahapatra

Banerjee

Pegeon

et al. 2003

ICCAD-2003. International Conference on Computer Aided Design (IEEE Cat. No.03CH37486)

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This paper introduces a CAD framework for co-simulation of hybrid circuits containing CMOS and SET (Single Electron Transistor) devices. An improved analytical model for SET is also formulated and shown to be applicable in both digital and analog domains. Particularly, the extension of the recent MIB model for single/multi gate symmetric/asymmetric device for a wide range of drain to source voltage and temperature is addressed. Circuit level co-simulations are successfully performed by implementing the SET analytical model in Analog Hardware Description Language (AHDL) of a professional circuit simulator SMARTSPICE. Validation at device and circuit level is carried out by MonteCarlo simulations. Some novel functionality hybrid CMOS-SET circuit characteristics: (i) SET neuron (ii) Multiple valued logic circuit and (iii) a new Negative Differential Resistance (NDR) circuit, are also predicted by the proposed SET model and analyzed using the new hybrid simulator.

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Section: Introductionmentioning

confidence: 99%

A CAD framework for co-design and analysis of CMOS-SET hybrid integrated circuits

Mahapatra

Banerjee

Pegeon

et al. 2003

ICCAD-2003. International Conference on Computer Aided Design (IEEE Cat. No.03CH37486)

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“…This is unlikely to be a serious issue in industrial labs and fabs since there has already been successful exploration into non-traditional small CMOS devices such as double-gate structures, FINFET, etc. in recent years [95].…”

Section: Concluding Remarks and Future Directionsmentioning

confidence: 98%

Catalyzed chemical vapor deposition of one-dimensional nanostructures and their applications

Meyyappan

2009

Progress in Crystal Growth and Characterization of Materials

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“…However, the improvements in evolutionary technology may no longer sustain the further scaling trends in the foreseeable future due to the scaling limits by the device structures on physical fundamental, material, circuit, and system [4,5]. Breakthroughs both in materials and in architectures are required to continue or get beyond the scaling-down paradigm [6][7][8].…”

Section: Introductionmentioning

confidence: 99%