Extending the 1-D Hovel Model for Coherent and Incoherent Back Reflections in Homojunction Solar Cells

Lumb, Matthew P.; Bailey, Christopher G.; Adams, Jessica G. J.; Hillier, G.; Tuminello, F.; Elarde, V.C.; Walters, Robert J.

doi:10.1109/jqe.2013.2252148

Cited by 37 publications

(29 citation statements)

References 24 publications

(20 reference statements)

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“…The solar cells subjected to 1‐MeV irradiation have been analyzed based on the 1D analytical Hovel model and its extended version for thin‐film solar cells with back‐side reflector . The model formulation is rather general and well suited to describe different solar cell designs provided that material and geometry parameters are changed accordingly.…”

Section: Methodsmentioning

confidence: 99%

“…Schematic representation of the modeled solar cell structure with the 1D cut‐line and parameters definition used in the analytical model (adapted from Lumb et al) [Colour figure can be viewed at wileyonlinelibrary.com]…”

Section: Methodsmentioning

confidence: 99%

“…The wavelength dependent R top and R bot are derived from 1D electromagnetic simulations for coherent multilayers, using material optical data taken from the literature for GaAs, and from ellipsometry measurements for the other materials. Further model details and the resulting analytical expressions can be found in previous works …”

Section: Methodsmentioning

confidence: 99%

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Electron radiation–induced degradation of GaAs solar cells with different architectures

Gruginskie

Cappelluti

Bauhuis

et al. 2020

Progress in Photovoltaics

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The effects of electron irradiation on the performance of GaAs solar cells with a range of architectures is studied. Solar cells with shallow and deep junction designs processed on the native wafer as well as into a thin‐film were irradiated by 1‐MeV electrons with fluence up to 1×1015 e−/cm2. The degradation of the cell performance due to irradiation was studied experimentally and theoretically using model simulations, and a coherent set of minority carriers' lifetime damage constants was derived. The solar cell performance degradation primarily depends on the junction depth and the thickness of the active layers, whereas the material damage shows to be insensitive to the cell architecture and fabrication steps. The modeling study has pointed out that besides the reduction of carriers lifetime, the electron irradiation strongly affects the quality of hetero‐interfaces, an effect scarcely addressed in the literature. It is demonstrated that linear increase with the electron fluence of the surface recombination velocity at the front and rear hetero‐interfaces of the solar cell accurately describes the degradation of the spectral response and of the dark current characteristic upon irradiation. A shallow junction solar cell processed into a thin‐film device has the lowest sensitivity to electron radiation, showing an efficiency at the end of life equivalent to 82% of the beginning‐of‐life efficiency.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Electron radiation–induced degradation of GaAs solar cells with different architectures

Gruginskie

Cappelluti

Bauhuis

et al. 2020

Progress in Photovoltaics

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“…3 can be approximated with a constant base doping level. It is advantageous if the structure can be simplified as this would allow fast and intuitive analytical evaluation [8] of the layer-by-layer structure including the impact of interface recombination (impact of SRV cannot be accounted for in the numerical solver at this time). Fig.…”

Section: Photovoltaic Device Methodology and Resultsmentioning

confidence: 99%

Analysis of GaAs solar cells at High MOCVD growth rates

Schmieder

Yakes

Bailey

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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Single junction GaAs solar cells grown by MOCVD are fabricated over a range of growth rates targeting up to 56 µm/hr in order to evaluate the effect on photovoltaic device performance. MOCVD recipe conditions are provided. Dopant incorporation efficiency is found to increase at high growth rates, potentially due to reduced Zn desorption as the time required to deposit a monolayer of GaAs is reduced. Device results are characterized by light and dark-IV as well as external quantum efficiency and verified against bulk minority carrier lifetime data from time-resolved photoluminescence. High growth rate solar cells degrade less than 4% relative to baseline devices with Voc and Jsc losses of 1% and 3%, respectively. The comparison suggests that both bulk Shockley Read Hall (SRH) lifetime and surface recombination velocity (SRV) are affected by growth rate and contribute to a reduction in performance.

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“…4, four example structures are shown and the wiring scheme of each is shown schematically. All the calculated external quantum efficiency (EQE) curves and efficiency values are computed using NRL MultiBands®, which uses literature values of optical constants, transport and band parameters combined in an analytical drift-diffusion framework capable of accounting for coherent optical effects 7 and photon recycling 8 . Figure 4(a) is an example of a four junction device where the subcells are current matched.…”

Section: Next Generation Solar Cellsmentioning

confidence: 99%