Abstract:Conventional optical lithography using a KrF excimer laser (λ =248 nm) is routinely used to manufacture DRAM technologies at ground rules as small as 0.15 µm. Due to the relative immaturity of ArF (λ =193 nm) lithography, it is desirable to continue to use KrF lithography for ground rules in the 0.13 µm regime. Simultaneously, continued DRAM chip scaling has led to investigation of open bit line architectures, whose theoretical minimum cell size is 4F 2 , where F is the minimum feature dimension. This has die … Show more
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