Extending 1.35 NA immersion lithography down to 1x nm production nodes

Bouchoms, Igor; Leenders, Martijn; Kuit, Jan Jaap; Kazinczi, Robert; Graaf, Roelof de; Paarhuis, Bart; Gunter, P. L. J.; Weichselbaum, Stefan; Beems, Marcel; Verhoeven, Martin; Ballegoij, Rob van

doi:10.1117/12.915807

Cited by 11 publications

(4 citation statements)

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“…This is pursued in a similar fashion as has been done in current lithography tools [13,14]. First, a 1.5 -2x increase in the control bandwidth of the mask stage is targeted.…”

Section: Stage Dynamics and Controlmentioning

confidence: 99%

EUV lithography scanner for sub-8nm resolution

et al. 2015

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EUV lithography for resolutions below 8 nm half pitch requires the numerical aperture (NA) of the projection lens to be significantly larger than the current state-of-the-art 0.33NA. In order to be economically viable, a throughput in the range of 100 wafers per hour is needed.As a result of the increased NA, the incidence angles of the light rays at the mask increase significantly. Consequently the shadowing deteriorates the aerial image contrast to unacceptably low values at the current 4x magnification.The only solution to reduce the angular range at the mask is to increase the magnification. Simulations show that we have to double the magnification to 8x in order to overcome the shadowing effects. Assuming that the mask infrastructure will not change the mask form factor, this would inevitably lead to a field size that is a quarter of the field size of current 0.33NA step & scan systems. This would reduce the throughput of the high-NA scanner to a value significantly below 100 wafers per hour unless additional measures are taken.This paper presents an anamorphic step & scan system capable to print fields that are half the field size of the current full field. The anamorphic system has the potential to achieve a throughput in excess of 150 wafers per hour by increasing the transmission of the optics as well as increasing the acceleration of the wafer-and mask stage. This makes it an economically viable lithography solution. Furthermore, the simulated imaging behavior of the system is demonstrated and its impact on the rest of the lithographic system is discussed.

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“…This is pursued in a similar fashion as has been done in current lithography tools [13,14]. First, a 1.5 -2x increase in the control bandwidth of the mask stage is targeted.…”

Section: Stage Dynamics and Controlmentioning

confidence: 99%

EUV lithography scanner for sub-8nm resolution

et al. 2015

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“…Based on a more advanced TWINSCAN NXT system architecture, the NXT:1950i, was launched in 2008 and delivered a step in productivity to over 200 wafers per hour, while also improving overlay to 2.5 nanometers. Contrary to the XT systems that use traditional stage-control interferometers, NXT:1950i incorporates an encoder-based stage positioning platform [8][9][10][11]. The reduced beam length in these encoder systems is known to be more robust to thermal conditioning perturbations and enable enhanced accuracy and reproducibility as is reflected in the total system overlay.…”

Section: Duv Dry Technology Advancementsmentioning

confidence: 99%

Driving exposure accuracy and cost-of-ownership on DUV immersion and dry-NXT scanner products

de Boeij,

Smeets,

Viola

et al. 2024

Optical and EUV Nanolithography XXXVII

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In this paper we will report on the most recent immersion scanner innovations to improve scanner matching overlay. These are realized by improvements in e.g. optical column distortion, wafer alignment and system-metrology. We will elaborate on scanner solutions for wafer handling/chucking of warped wafers. Furthermore, to enable cost-of-ownership reduction, system design implementations driving larger scanner productivity (wafer per hour) will be presented.

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“…During lithography tool exposure, the reticle absorbs ultraviolet light, inducing temperature elevation and consequent stress and deformation [1] [2] . Reticle deformation can be divided into horizontal deformation and vertical deformation.…”

Section: Introductionmentioning

confidence: 99%

Simulation analysis of thermally induced deformation on reticle for deep ultraviolet lithography

Cao,

Lu,

Feng

et al. 2023

Fourteenth International Conference on Information Optics and Photonics (CIOP 2023)

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Extending 1.35 NA immersion lithography down to 1x nm production nodes

Cited by 11 publications

References 0 publications

EUV lithography scanner for sub-8nm resolution

EUV lithography scanner for sub-8nm resolution

Driving exposure accuracy and cost-of-ownership on DUV immersion and dry-NXT scanner products

Simulation analysis of thermally induced deformation on reticle for deep ultraviolet lithography

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