Extended X-ray Bremsstrahlung Isochromat Fine Structure of SiO₂

Abstract

X-ray bremsstrahlung isochromat of amorphous SiO2 deposited on Si crystal was measured in an energy range up to 250 eV above the threshold. Extended X-ray bremsstrahlung isochromat he structure (EXBIFS) was observed up to 150 eV for SiO2 studied. The Fourier transform of EXBIFS showed two peaks originated from first and second neighbors around silicon and oxygen ions. Model calculations of EXBIFS of amorphous SiO2 were performed in terms of single scattering of spherical waves and compared with experimental results.