Extended quasi‐Y‐source inverter with suppressed inrush and leakage effects

Abstract

The Y-source inverter uses different turns ratios of a coupled inductor and a controllable duty ratio to vary its gain. However, its input current is discontinuous, and any leakage inductances of its coupled inductor will lead to unintentional dc-link voltage spikes and gain reduction. To solve these problems, an extended quasi-Y-source inverter has been proposed in this study, which compared with the Y-source inverter, uses an extra inductor and an extra capacitor. Although the extras may not appear attractive, they have successfully helped with the suppression of leakage effects, which decrease the voltage spikes, and hence permit the main magnetic core size to be much smaller. Concurrently, the continuous input current can be also achieved. Besides, inrush current at startup has been reduced to a more acceptable value, which together with other features of the proposed inverter, have been proven through experiments.

High Robust Control Model of High Step Up Three Phase Y Source Inverters based on Model Predictive Control

“…The predicted output current can be preset according to Euler discretization (17) where 𝜆𝑣𝑐 and 𝜆L the weighting factor for the capacitor voltage and inductor current respectively, 𝑖 𝛼_𝑜 (𝑘 + 1) , 𝑖 𝛽_𝜊 (𝑘 + 1) are real/imaginary predicted current vectors and 𝑖 𝛼_𝑟𝑒𝑓 (𝑘 + 1) , 𝑖 𝛽_𝑟𝑒𝑓 (𝑘 + 1) are real/imaginary predicted reference currents; 𝑣 𝑐_ 𝑟𝑒𝑓 and 𝑣 𝑐1 (𝑘 + 1) are the reference and predicted capacitor voltage. In this paper, the values of weighting factors are chosen by trial and error.…”

A high-breakdown-voltage β-Ga2O3 nanoFET with a beveled field-plate structure

“…8,9 SiC metal-oxide-semiconductor FET (MOS-FET)-based inverters have been employed in electric vehicles. 10 Power electronics with smaller footprints and low weights can be realized using wide-bandgap semiconductors, which lowers the operating cost. 11,12 A b-gallium oxide (b-Ga 2 O 3 ) semiconductor has emerged as a next-generation power device material, and the devices based on it outperform GaN (846)-and 4H-SiC (317)based electronic devices owing to high breakdown field (B8 MV cm À1 (estimated)) and high Baliga's figure-of-merit (3214) of the b-Ga 2 O 3 .…”

High‐Quality and Wafer‐Scale Cubic Silicon Carbide Single Crystals

“…[ 1–4 ] Currently, most devices, such as metal‐oxide‐semiconductor field effect transistors (MOSFETs), which are core devices used in electric vehicles, photovoltaic industry and other applications, are fabricated on a hexagonal polytype 4H‐SiC because of its commercial availability. [ 5,6 ] Cubic silicon carbide (3C‐SiC), the only cubic polytype, has a moderate band gap of 2.36 eV at room‐temperature, but a superior mobility and thermal conduction than that of 4H‐SiC. [ 4,7–12 ] Moreover, the much lower concentration of interfacial traps between insulating oxide gate and 3C‐SiC helps fabricate reliable and long‐life devices.…”