Extended defects in shallow implants

Claverie, A.; Colombeau, B.; Mauduit, B. de; Bonafos, Caroline; Hebras, Xavier; Assayag, Gérard; Cristiano, Fuccio

doi:10.1007/s00339-002-1944-0

Cited by 131 publications

(120 citation statements)

References 0 publications

Supporting

Mentioning

114

Contrasting

Order By: Relevance

“…The various predicted structures were found to be in excellent structural agreement with microscopy observations and electronic-structure calculations. [2][3][4][5][6][7] Overall, the three different potentials employed, namely, the environment-dependent interatomic potential ͑EDIP͒, 8 Tersoff, 9 and Stillinger-Weber ͑SW͒, 10 all predicted consistent overall trends, leading to a qualitatively coherent picture for some aspects of selfinterstitial clustering in silicon. In particular, it was found that cluster morphology is sensitively dependent on both the temperature and stress within the lattice.…”

Section: Introductionmentioning

confidence: 77%

“…Both of these results are consistent with the experimental observation that self-interstitial clusters eventually tend to coarsen into FDLs and then PDLs under most anneal-ing conditions. 3,[24][25][26][27][28][29] On the other hand, the absence of ͕100͖ planar defects in silicon wafer annealing experiments cannot be explained on the basis of simple energetics as these are found to possess formation energies that are very similar to the various configurations of ͕113͖ defects. For example, Goss 5 employed DFT within the local density approximation to compute the formation energies of infinite ͕100͖ and ͕113͖ defects, and found that the ͕100͖ defect was in fact slightly favored over the ͕113͖.…”

Section: Formation Thermodynamics For Self-interstitial Clusters-prevmentioning

confidence: 99%

“…It is not possible to extend our simulations to the point at which ͕113͖ defects evolve by unfaulting into lower energy ͕111͖ defects but previous work shows that this transition is expected at around n I = 500. 3 …”

Section: A Low Temperature And/or Tensile Stressmentioning

confidence: 99%

See 2 more Smart Citations

Detailed microscopic analysis of self-interstitial aggregation in silicon. II. Thermodynamic analysis of single clusters

2010

View full text Add to dashboard Cite

We analyze results generated by large-scale molecular-dynamics simulations of self-interstitial clusters in crystalline silicon using a recently developed computational method for probing the thermodynamics of defects in solids. In this approach, the potential-energy landscape is sampled with lengthy moleculardynamics simulations and repeated energy minimizations in order to build distribution functions that quantitatively describe the formation thermodynamics of a particular defect cluster. Using this method, a comprehensive picture for interstitial aggregation is proposed. In particular, we find that both vibrational and configuration entropic factors play important roles in determining self-interstitial cluster morphology. In addition to the expected role of temperature, we also find that applied (hydrostatic) pressure and the commensurate lattice strain greatly influence the resulting aggregation pathways. Interestingly, the effect of pressure appears to manifest not by altering the thermodynamics of individual defect configurations but rather by changing the overall energy landscape associated with the defect. These effects appear to be general and are predicted using multiple, well-tested, empirical interatomic potentials for silicon. Our results suggest that internal stress environments within a silicon wafer (e.g., created by ion implantation) could have profound effects on the observed selfinterstitial cluster morphology. We analyze results generated by large-scale molecular-dynamics simulations of self-interstitial clusters in crystalline silicon using a recently developed computational method for probing the thermodynamics of defects in solids. In this approach, the potential-energy landscape is sampled with lengthy molecular-dynamics simulations and repeated energy minimizations in order to build distribution functions that quantitatively describe the formation thermodynamics of a particular defect cluster. Using this method, a comprehensive picture for interstitial aggregation is proposed. In particular, we find that both vibrational and configuration entropic factors play important roles in determining self-interstitial cluster morphology. In addition to the expected role of temperature, we also find that applied ͑hydrostatic͒ pressure and the commensurate lattice strain greatly influence the resulting aggregation pathways. Interestingly, the effect of pressure appears to manifest not by altering the thermodynamics of individual defect configurations but rather by changing the overall energy landscape associated with the defect. These effects appear to be general and are predicted using multiple, well-tested, empirical interatomic potentials for silicon. Our results suggest that internal stress environments within a silicon wafer ͑e.g., created by ion implantation͒ could have profound effects on the observed selfinterstitial cluster morphology. Disciplines Biochemical and Biomolecular Engineering | Chemical Engineering | Engineering

show abstract

Section: Introductionmentioning

confidence: 77%

Section: Formation Thermodynamics For Self-interstitial Clusters-prevmentioning

confidence: 99%

See 1 more Smart Citation

Detailed microscopic analysis of self-interstitial aggregation in silicon. II. Thermodynamic analysis of single clusters

2010

View full text Add to dashboard Cite

show abstract

“…By employing the transmission electron microscopy ͑TEM͒, the crystallographic structure of the defects, formed during the low temperature epitaxial regrowth, has been resolved and to date four types of extended defects in Si are known: small interstitial clusters ͑less than ten atoms, invisible by TEM͒, elongated or rodlike defects, called ͕113͖'s, and perfect and faulted dislocation loops ͑PDLs and FDLs, respectively͒. [1][2][3][4] It has been ascertained that, during annealing, all these defects evolve following an Ostwald ripening process and, eventually, they change their crystallographic structure, in order to minimize their formation energy. 4 During a moderate thermal annealing ͑600-800°C͒, ͕113͖'s are initially formed.…”

Section: Evidences Of An Intermediate Rodlike Defect During the Transmentioning

confidence: 99%

“…[1][2][3][4] It has been ascertained that, during annealing, all these defects evolve following an Ostwald ripening process and, eventually, they change their crystallographic structure, in order to minimize their formation energy. 4 During a moderate thermal annealing ͑600-800°C͒, ͕113͖'s are initially formed. However, if the total interstitial population is sufficiently high, additional thermal budgets allow the ͕113͖'s to transform into PDLs and FDLs, which, in turn, engage a competitive ripening mechanism among themselves, depending on the different experimental conditions.…”

Section: Evidences Of An Intermediate Rodlike Defect During the Transmentioning

confidence: 99%

Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops

Boninelli

Cherkashin

Claverie

et al. 2006

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

A detailed study of the transformation of the {113} defects into dislocation loops has been carried out in Ge preamorphized silicon (30keV, 1×1015Ge+∕cm2) and annealed at 800°C for time ranging from 15to2700s. The presence of a stable defect, along the ⟨110⟩ directions, formed during the transformation from {113}’s into Frank dislocation loops (FDLs), has been revealed and studied. Performing a detailed transmission electron microscopy analysis in nonconventional zone axes, a 1∕3 [111]-type Burgers vector has been found. These defects are shown to be more stable than {113}’s but less than FDLs.

show abstract

Characterization of Process‐Induced Defects

Cherkashin¹,

Claverie²

2012

Transmission Electron Microscopy in Micro‐Nanoelectronics

View full text Add to dashboard Cite

Extended defects in shallow implants

Cited by 131 publications

References 0 publications

Detailed microscopic analysis of self-interstitial aggregation in silicon. II. Thermodynamic analysis of single clusters

Detailed microscopic analysis of self-interstitial aggregation in silicon. II. Thermodynamic analysis of single clusters

Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops

Characterization of Process‐Induced Defects

Contact Info

Product

Resources

About