Exploring the potential of high-speed 2D and 3D materials in silicon photonics

Wang, Hao; Gui, Yaliang; Heidari, Elham; Kang, Haoyan; Ye, Jiachi; Dong, Chaobo; Thomaschewski, Martin; Nouri, Behrouz Movahhed; Dalir, Hamed; Sorger, Volker J.

doi:10.1117/12.2651068

Cited by 15 publications

(17 citation statements)

References 26 publications

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“…Finally, the culmination of these innovations and advancements will enable us to fabricate a comprehensive silicon photonic chip that can be directly integrated onto an electronic chip carrier. This would represent a critical milestone in the development of photonic-electronic integrated systems, bringing us closer to an era of high-performance, low-power, and highly-integrated computing platforms [30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46] . By presenting a detailed roadmap from our early-stage work to our current accomplishments, as well as outlining future development milestones, we aim to offer a comprehensive overview of the Photonic Tensor Core's journey from concept to near-completion.…”

Section: Discussionmentioning

confidence: 99%

Programmable photonic chips and applications

Peserico,

Nouri,

Dalir

et al. 2023

Active Photonic Platforms (APP) 2023

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The high demand for AI services in conjunction with a dramatic chip shortage along with technology leaps such as 5/6G networks, quantum technologies, cybersecurity threats, and the CHIPS Act have resurrected a R&D push for next-generation semiconductor materials, devices, and information processing hardware capability. In this paper, we will present the latest advances in regarding programable photonics and chip, from devices to packaging and system architecture, bringing these innovations into the bigger picture of macro trends and national priorities such as Industry-4.0 and the recent U.S. CHIPS Act.

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Section: Discussionmentioning

confidence: 99%

Programmable photonic chips and applications

Peserico,

Nouri,

Dalir

et al. 2023

Active Photonic Platforms (APP) 2023

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“…Among various electro-optic devices, modulators emerge as quintessentially crucial owing to the inherent deficiency of photonic technology in generating efficient light sources during processing. [20][21][22][23][24][25][26][27][28] The design and implementation of electro-optic modulators have leveraged multiple mechanisms, including mechanical tuning, phase change, and thermos-optic tuning, magneto-optic effect and etc. Despite their utility, these approaches often suffer from limitations in speed, rendering them less optimal for applications necessitating high bandwidth.…”

Section: Introductionmentioning

confidence: 99%

Design and optimization of a high-speed ITO-plasmon-based asymmetric Mach-Zehnder interferometer modulator

Altaleb,

Ye,

Gui

et al. 2024

Physics and Simulation of Optoelectronic Devices XXXII

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This study introduces an innovative indium tin oxide (ITO) plasmon-based asymmetric Mach-Zehnder Interferometer (MZI) modulator, designed to tackle prevailing issues in photonic modulators. Emphasizing the modulator's attributes, we offer low bias voltage, compactness, sufficient extinction ratio (ER), low insertion loss (IL), and low electrical resistance, paving the way for operational speeds up to multiple GHz. We meticulously examined material properties and modulator design to strike an optimized balance between ER and IL, adhering to the constraints of minor phase shifts. A 4.7 µm-long ITO-plasmon-based asymmetric MZI modulator was devised, incorporating a phase shift of 0.33π, an ER of 3 dB, an IL of 2.9 dB, and a speed of 108 GHz under the bias of ±3.5 V. The device length is judiciously selected considering high transmission difference, high ER, and low IL. Our asymmetric MZI modulator (41:59) results in 0.4 dB lower IL in comparison to the symmetric MZI modulator. In terms of modulation depth, an amplified oxide thickness can curtail the device's capacitance, thereby augmenting the RC-limited device bandwidth. Concurrently, we propose a design protocol to attain tailored metrics such as modulation depth, speed, and losses that broaden the selection of active materials for engineering modulators with functionality-based performance. Notably, the modulator showcases remarkable switching speeds up to 100 GHz, a notably low energy consumption of 380 fJ/bit, and is adaptable to a multitude of material frameworks. This work marks a significant stride in the field of photonic modulators, opening new avenues for compact, high-performance, and energy-efficient modulating devices.

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“…[24][25][26][27] The strong excitonic absorption in these ultra-thin materials can be harvested for designing sensors. [28][29][30][31][32][33][34] When focusing on performance in the visible spectrum, the silicon nitride photonic platform is a great advantage concerning silicon photonic platform due to the opacity of the latter one (1.1 eV bandgap). Here we performed an extensive study on nonintegrated WS 2 photodetectors and integrated WS 2 photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Exciton strain mapping in 2D TMDCs for sensing and photodetection

Patil,

Ye,

kang

et al. 2023

Low-Dimensional Materials and Devices 2023

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Here we demonstrate Tungsten Disulfide (WS2) integrated silicon nitride photodetector, and we experimentally tested the responsivity of 0.32 A/W. The spectroscopic results using PL and Raman mapping were used to understand strain effect on excitonic bandgap by studying characteristics like excitons, trions, E12g, A1g and opto-electronic response. We show high potential for flexible sensors and high spectral resolution sensing.

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Exploring the potential of high-speed 2D and 3D materials in silicon photonics

Cited by 15 publications

References 26 publications

Programmable photonic chips and applications

Programmable photonic chips and applications

Design and optimization of a high-speed ITO-plasmon-based asymmetric Mach-Zehnder interferometer modulator

Exciton strain mapping in 2D TMDCs for sensing and photodetection

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