2012
DOI: 10.1016/j.surfcoat.2011.11.032
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Exploring the potential of high power impulse magnetron sputtering for growth of diamond-like carbon films

Abstract: Amorphous carbon films are deposited employing high power impulse magnetron sputtering (HiPIMS) at pulsing frequencies of 250 Hz and 1 kHz. Films are also deposited by direct current magnetron sputtering (dcMS), for reference. In both HiPIMS and dcMS cases, unipolar pulsed negative bias voltages up to 150 V are applied to the substrate to tune the energy of the positively charged ions that bombard the growing film. Plasma analysis reveals that HiPIMS leads to generation of a larger number of ions with larger a… Show more

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Cited by 94 publications
(71 citation statements)
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“…Moreover, the HiPIMS discharge, owing to its high density, may result in the generation of 9 relatively large amount of activated radicals and atoms which may result in the incorporation of these species into the film increasing its H content [7]. However, irrespective of the level of H content in our films its nearly constant values imply that the observed density increase is a direct consequence of an increase in the C-C sp 3 bond fraction.…”
Section: Resultsmentioning
confidence: 78%
See 1 more Smart Citation
“…Moreover, the HiPIMS discharge, owing to its high density, may result in the generation of 9 relatively large amount of activated radicals and atoms which may result in the incorporation of these species into the film increasing its H content [7]. However, irrespective of the level of H content in our films its nearly constant values imply that the observed density increase is a direct consequence of an increase in the C-C sp 3 bond fraction.…”
Section: Resultsmentioning
confidence: 78%
“…However, this route is challenged when nonmetals such as carbon, which exhibits a significantly higher E i value of 11.26 eV, is considered. For instance, Sarakinos et al have shown that the dominant ionized species in a HiPIMS discharge are Ar + ions while C + ions constitute only ~1% of the total ionic contribution [7]. Moreover, DeKoven et al have shown that in HiPIMS discharges the C + /C ratio does not exceed 5% [8].…”
Section: Introductionmentioning
confidence: 99%
“…Using magnetron sputtering based high plasma density discharges such as high power impulse magnetron sputtering (HiPIMS) [15] a higher C ionized fraction, mass density as well as sp 3 /sp 2 fraction has been obtained. However these properties are not comparable to those obtained by CVA and PLD [16,17]. In a previous study we addressed this issue by conceiving and implementing a strategy [18] which entailed increase of the electron temperature in high electron density discharge (such as HiPIMS) by using higher ionization potential buffer gas, Ne, instead of Ar.…”
Section: Introductionmentioning
confidence: 97%
“…DCMS and RFMS have been widely used for a-C film growth [14,15] however, owing to their inability to generate large ionized C fluxes [8] these methods are not always suitable for synthesizing carbon-based thin films exhibiting a wide range of properties. HiPIMS has demonstrated its potential to overcome this difficulty [15,16] however, previous reports on HiPIMS-based synthesis of a-C suggest that the ionized fraction of C using HiPIMS is still much lower [15,16] than those achieved using for example cathodic arc evaporation [17][18][19]. Therefore, in order to demonstrate the viability of HiPIMS for tailor-made a-C thin film growth, the development of new strategies is required.…”
Section: Introductionmentioning
confidence: 99%