Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions

Flores, S.; Ben, T.; Braza, V.; Bailey, Nicholas J.; Carr, M. R.; Richards, Robert D.; González, David

doi:10.1016/j.apsusc.2022.154966

Cited by 3 publications

(6 citation statements)

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“…In the low-temperature regime, the increased Bi flux decreases the protective effect of the SRL, inducing a greater QD decomposition. This behavior is different from what occurs when Bi is used as a surfactant during the growth of InAs QDs at low temperatures, which produces an increase of both QD height and base diameters [ 36 ].…”

Section: Resultsmentioning

confidence: 90%

“…This problem could be avoided by reducing the ML number of the InAs layer so that the bare QDs are already smaller to begin with. Furthermore, it has already been shown that the presence of Bi can stimulate the formation of QDs at these temperatures [ 36 ]. Progress has also been made on the conditions required for the GaAsBi SRL.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…For example, it has been reported that the addition of Bi during the growth of InAs/GaAs (001) QDs at low temperatures promotes the formation of QDs that are not observed without Bi. In fact, the Bi flux leads to a rapid increase in QD size [ 36 ].…”

Section: Introductionmentioning

confidence: 99%

“…On the one hand, the overgrowth temperature of a CL for InAs QDs should be close to or slightly lower than the QD growth temperature to avoid excessive intermixing and erosion of the QD apexes [34,35]. However, at typical GaAs growth temperatures (~580 • C), Bi can only be used as a surfactant since it segregates rather than incorporates [36,37]. GaAsBi layers are only achievable at low temperatures below ~400 • C. On the other hand, capping InAs QDs with GaAs grown at low temperatures (300 • C), despite preserving sharp QD pyramidal shapes and planar interfaces, results in poor structural and optical quality [38,39].…”

Section: Introductionmentioning

confidence: 99%

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Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots

Braza,

Fernández,

Ben

et al. 2024

Nanomaterials

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This paper investigates the effect of GaAsBi strain reduction layers (SRLs) on InAs QDs with different Bi fluxes to achieve nanostructures with improved temperature stability. The SRLs are grown at a lower temperature (370 °C) than the usual capping temperature for InAs QDs (510 °C). The study finds that GaAs capping at low temperatures reduces QD decomposition and leads to larger pyramidal dots but also increases the threading dislocation (TD) density. When adding Bi to the capping layer, a significant reduction in TD density is observed, but unexpected structural changes also occur. Increasing the Bi flux does not increase the Bi content but rather the layer thickness. The maximum Bi content for all layers is 2.4%. A higher Bi flux causes earlier Bi incorporation, along with the formation of an additional InGaAs layer above the GaAsBi layer due to In segregation from QD erosion. Additionally, the implementation of GaAsBi SRLs results in smaller dots due to enhanced QD decomposition, which is contrary to the expected function of an SRL. No droplets were detected on the surface of any sample, but we did observe regions of horizontal nanowires within the epilayers for the Bi-rich samples, indicating nanoparticle formation.

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Section: Resultsmentioning

confidence: 90%

Section: Resultsmentioning

confidence: 99%